FJP5027RTU
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- Mfr.Part #
- FJP5027RTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 800V 3A TO220-3
- Stock
- 76,149
- In Stock ：
- 76,149
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 10
- Collector Base Voltage (VCBO) :
- 1.1kV
- Mount :
- Through Hole
- Package / Case :
- TO-220-3
- Published :
- 2003
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- JEDEC-95 Code :
- TO-220AB
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 800V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 1.8g
- Max Collector Current :
- 3A
- Pbfree Code :
- yes
- Frequency :
- 15MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 200mA 5V
- ECCN Code :
- EAR99
- Height :
- 15.7mm
- Collector Emitter Saturation Voltage :
- 2V
- Transition Frequency :
- 15MHz
- Lead Free :
- Lead Free
- Current Rating :
- 3A
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Emitter Base Voltage (VEBO) :
- 7V
- Width :
- 4.5mm
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 300mA, 1.5A
- Power Dissipation :
- 50W
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 15MHz
- Factory Lead Time :
- 4 Weeks
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 50W
- Base Part Number :
- FJP5027
- Terminal Finish :
- Tin (Sn)
- Voltage - Rated DC :
- 800V
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 800V
- Length :
- 9.9mm
- Datasheets
- FJP5027RTU
FJP5027RTU Documents
NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
FJP5027RTU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 15 @ 200mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 300mA, 1.5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Its current rating is 3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 15MHz.During maximum operation, collector current can be as low as 3A volts.
FJP5027RTU Features
the DC current gain for this device is 15 @ 200mA 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 300mA, 1.5A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 15MHz
FJP5027RTU Applications
There are a lot of ON Semiconductor
FJP5027RTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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