FJP5027OTU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Operating Temperature :

150°C TJ

Vce Saturation (Max) @ Ib, Ic :

2V @ 300mA, 1.5A

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 200mA 5V

Element Configuration :

Single

Package / Case :

TO-220-3

Max Collector Current :

3A

Lead Free :

Lead Free

Weight :

1.8g

Mount :

Through Hole

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

hFE Min :

10

Transistor Type :

NPN

Voltage - Rated DC :

800V

Collector Emitter Voltage (VCEO) :

800V

Gain Bandwidth Product :

15MHz

Base Part Number :

FJP5027

Pbfree Code :

yes

Collector Base Voltage (VCBO) :

1.1kV

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Power Dissipation :

50W

Current - Collector Cutoff (Max) :

10μA ICBO

Current Rating :

3A

Polarity/Channel Type :

NPN

Emitter Base Voltage (VEBO) :

7V

Number of Elements :

1

ECCN Code :

EAR99

Factory Lead Time :

24 Weeks

Number of Pins :

3

Collector Emitter Breakdown Voltage :

800V

Frequency :

15MHz

Transition Frequency :

15MHz

JEDEC-95 Code :

TO-220AB

Packaging :

Tube

Radiation Hardening :

No

Published :

2011

Max Power Dissipation :

50W

JESD-609 Code :

e3