FJP5555TU
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- Mfr.Part #
- FJP5555TU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 5A TO220-3
- Stock
- 14,358
- In Stock ：
- 14,358
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 5A
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 400V
- Height :
- 16.51mm
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 1.5V
- Polarity/Channel Type :
- NPN
- Package / Case :
- TO-220-3
- Lead Free :
- Lead Free
- Current Rating :
- 5A
- Mount :
- Through Hole
- Weight :
- 1.8g
- Width :
- 4.83mm
- Factory Lead Time :
- 14 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1A, 3.5A
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Length :
- 10.67mm
- Power Dissipation :
- 75W
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 400V
- Transistor Type :
- NPN
- Published :
- 2011
- Element Configuration :
- Single
- Number of Pins :
- 3
- Number of Terminations :
- 3
- hFE Min :
- 20
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 800mA 3V
- Emitter Base Voltage (VEBO) :
- 14V
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- 400V
- Mounting Type :
- Through Hole
- Collector Base Voltage (VCBO) :
- 1.05kV
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Max Power Dissipation :
- 75W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Datasheets
- FJP5555TU
NPN 150°C TJ 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
FJP5555TU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 800mA 3V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 1A, 3.5A.The emitter base voltage can be kept at 14V for high efficiency.The current rating of this fuse is 5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible to have a collector current as low as 5A volts at Single BJT transistors maximum.
FJP5555TU Features
the DC current gain for this device is 20 @ 800mA 3V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 1A, 3.5A
the emitter base voltage is kept at 14V
the current rating of this device is 5A
FJP5555TU Applications
There are a lot of ON Semiconductor
FJP5555TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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