FJP5554TU

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Mfr.Part #
FJP5554TU
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 400V 4A TO220-3
Stock
1
In Stock :
1

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 2 days ago)
Operating Temperature :
150°C TJ
Transistor Application :
SWITCHING
Number of Pins :
3
Collector Emitter Breakdown Voltage :
400V
Collector Base Voltage (VCBO) :
1.05kV
Mount :
Through Hole
Package / Case :
TO-220-3
hFE Min :
20
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 1A, 3.5A
Factory Lead Time :
15 Weeks
Terminal Finish :
Tin (Sn)
Voltage - Rated DC :
400V
Lead Free :
Lead Free
JESD-609 Code :
e3
Emitter Base Voltage (VEBO) :
15V
Transistor Type :
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce :
20 @ 800mA 3V
Power Dissipation :
70W
Weight :
1.8g
Radiation Hardening :
No
Collector Emitter Voltage (VCEO) :
400V
Max Power Dissipation :
70W
Number of Terminations :
3
Number of Elements :
1
Collector Emitter Saturation Voltage :
1.5V
Max Collector Current :
4A
Packaging :
Tube
Current - Collector Cutoff (Max) :
250μA
Polarity/Channel Type :
NPN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pbfree Code :
yes
Transistor Element Material :
SILICON
Current Rating :
4A
ECCN Code :
EAR99
Mounting Type :
Through Hole
Element Configuration :
Single
Published :
2013
RoHS Status :
ROHS3 Compliant
Datasheets
FJP5554TU
Introducing Transistors - Bipolar (BJT) - Single onsemi FJP5554TU from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Number of Pins:3, Package / Case:TO-220-3, Number of Terminations:3, Mounting Type:Through Hole, FJP5554TU pinout, FJP5554TU datasheet PDF, FJP5554TU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi FJP5554TU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FJP5554TU


NPN 150°C TJ 250μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

FJP5554TU Overview


This device has a DC current gain of 20 @ 800mA 3V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1.5V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 15V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 4A.The maximum collector current is 4A volts.

FJP5554TU Features


the DC current gain for this device is 20 @ 800mA 3V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 1A, 3.5A
the emitter base voltage is kept at 15V
the current rating of this device is 4A


FJP5554TU Applications


There are a lot of ON Semiconductor
FJP5554TU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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