FJP5554TU

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Mfr.Part #
FJP5554TU
Manufacturer
Fairchild Semiconductor
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 400V 4A TO220-3
Stock
1
In Stock :
1

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
hFE Min :
20
Voltage - Rated DC :
400V
Collector Emitter Breakdown Voltage :
400V
Number of Pins :
3
Number of Terminations :
3
Emitter Base Voltage (VEBO) :
15V
ECCN Code :
EAR99
JESD-609 Code :
e3
Mount :
Through Hole
Pbfree Code :
yes
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Base Voltage (VCBO) :
1.05kV
Max Power Dissipation :
70W
Radiation Hardening :
No
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 1A, 3.5A
Published :
2013
Packaging :
Tube
Polarity/Channel Type :
NPN
Element Configuration :
Single
Power Dissipation :
70W
Transistor Type :
NPN
Weight :
1.8g
Transistor Element Material :
SILICON
Terminal Finish :
Tin (Sn)
Mounting Type :
Through Hole
Factory Lead Time :
15 Weeks
DC Current Gain (hFE) (Min) @ Ic, Vce :
20 @ 800mA 3V
Lead Free :
Lead Free
Transistor Application :
SWITCHING
Operating Temperature :
150°C TJ
Collector Emitter Saturation Voltage :
1.5V
RoHS Status :
ROHS3 Compliant
Collector Emitter Voltage (VCEO) :
400V
Current Rating :
4A
Max Collector Current :
4A
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 2 days ago)
Number of Elements :
1
Package / Case :
TO-220-3
Current - Collector Cutoff (Max) :
250μA
Datasheets
FJP5554TU
Introducing Transistors - Bipolar (BJT) - Single Fairchild Semiconductor FJP5554TU from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:150°C TJ, Package / Case:TO-220-3, FJP5554TU pinout, FJP5554TU datasheet PDF, FJP5554TU amp .Beyond Transistors - Bipolar (BJT) - Single Fairchild Semiconductor FJP5554TU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FJP5554TU


NPN 150°C TJ 250μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

FJP5554TU Overview


This device has a DC current gain of 20 @ 800mA 3V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1.5V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 15V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 4A.The maximum collector current is 4A volts.

FJP5554TU Features


the DC current gain for this device is 20 @ 800mA 3V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 1A, 3.5A
the emitter base voltage is kept at 15V
the current rating of this device is 4A


FJP5554TU Applications


There are a lot of ON Semiconductor
FJP5554TU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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