FJP5200RTU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Frequency :

30MHz

Collector Emitter Voltage (VCEO) :

250V

JESD-609 Code :

e3

Current - Collector Cutoff (Max) :

5μA ICBO

Element Configuration :

Single

Mount :

Through Hole

Max Collector Current :

17A

RoHS Status :

RoHS Compliant

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Number of Terminations :

3

Transistor Type :

NPN

Packaging :

Tube

Factory Lead Time :

6 Weeks

ECCN Code :

EAR99

Collector Base Voltage (VCBO) :

250V

Package / Case :

TO-220-3

Emitter Base Voltage (VEBO) :

5V

Collector Emitter Breakdown Voltage :

250V

Number of Elements :

1

Number of Pins :

3

Lead Free :

Lead Free

Polarity/Channel Type :

NPN

Weight :

1.8g

Power Dissipation :

100W

Gain Bandwidth Product :

30MHz

Pbfree Code :

yes

Radiation Hardening :

No

Transition Frequency :

30MHz

Terminal Finish :

Tin (Sn)

Power - Max :

80W

Transistor Application :

AMPLIFIER

Operating Temperature :

-50°C~150°C TJ

Published :

2005

DC Current Gain (hFE) (Min) @ Ic, Vce :

55 @ 1A 5V

JEDEC-95 Code :

TO-220AB

Transistor Element Material :

SILICON

hFE Min :

55

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

3V @ 800mA, 8A

Max Power Dissipation :

100W