FJP5200RTU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Package / Case :

TO-220-3

Current - Collector Cutoff (Max) :

5μA ICBO

Weight :

1.8g

Emitter Base Voltage (VEBO) :

5V

Collector Emitter Voltage (VCEO) :

250V

Gain Bandwidth Product :

30MHz

JESD-609 Code :

e3

Transistor Application :

AMPLIFIER

Collector Base Voltage (VCBO) :

250V

Element Configuration :

Single

hFE Min :

55

DC Current Gain (hFE) (Min) @ Ic, Vce :

55 @ 1A 5V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Polarity/Channel Type :

NPN

Collector Emitter Breakdown Voltage :

250V

Published :

2005

Mount :

Through Hole

Mounting Type :

Through Hole

RoHS Status :

RoHS Compliant

Factory Lead Time :

6 Weeks

Number of Elements :

1

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Max Power Dissipation :

100W

ECCN Code :

EAR99

Power - Max :

80W

Power Dissipation :

100W

Lead Free :

Lead Free

Transistor Type :

NPN

Max Collector Current :

17A

Frequency :

30MHz

Number of Pins :

3

Transition Frequency :

30MHz

Radiation Hardening :

No

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

Operating Temperature :

-50°C~150°C TJ

Pbfree Code :

yes

Packaging :

Tube

Vce Saturation (Max) @ Ib, Ic :

3V @ 800mA, 8A