FJP5200OTU
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- Mfr.Part #
- FJP5200OTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 250V 17A TO220-3
- Stock
- 41,704
- In Stock ：
- 41,704
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 800mA, 8A
- Current - Collector Cutoff (Max) :
- 5μA ICBO
- Element Configuration :
- Single
- Frequency :
- 30MHz
- RoHS Status :
- RoHS Compliant
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Weight :
- 1.8g
- Collector Emitter Breakdown Voltage :
- 250V
- Packaging :
- Tube
- Collector Emitter Voltage (VCEO) :
- 3V
- Power - Max :
- 80W
- Collector Base Voltage (VCBO) :
- 250V
- Emitter Base Voltage (VEBO) :
- 5V
- Operating Temperature :
- -50°C~150°C TJ
- Package / Case :
- TO-220-3
- Gain Bandwidth Product :
- 30MHz
- Transistor Type :
- NPN
- Max Collector Current :
- 17A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 1A 5V
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 100W
- Max Power Dissipation :
- 80W
- hFE Min :
- 55
- Datasheets
- FJP5200OTU
NPN -50°C~150°C TJ 5μA ICBO 1 Elements TO-220-3 Tube Through Hole
FJP5200OTU Overview
In this device, the DC current gain is 80 @ 1A 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 800mA, 8A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 17A volts at Single BJT transistors maximum.
FJP5200OTU Features
the DC current gain for this device is 80 @ 1A 5V
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at 5V
FJP5200OTU Applications
There are a lot of ON Semiconductor
FJP5200OTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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