FGH50N3

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - IGBTs - Single

Transistor Application :

POWER CONTROL

Gate Charge :

180nC

Additional Feature :

LOW CONDUCTION LOSS

Switching Energy :

130μJ (on), 92μJ (off)

Gate-Emitter Thr Voltage-Max :

5.5V

Polarity/Channel Type :

N-Channel

Packaging :

Tube

Collector Emitter Voltage (VCEO) :

300V

Width :

4.82mm

Operating Temperature :

-55°C~150°C TJ

Rise Time :

15ns

HTS Code :

8541.29.00.95

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Mount :

Through Hole

Transistor Element Material :

SILICON

Published :

2002

Length :

15.87mm

Pbfree Code :

yes

Collector Emitter Saturation Voltage :

1.3V

Height :

20.82mm

Number of Elements :

1

JESD-609 Code :

e3

Collector Emitter Breakdown Voltage :

300V

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

IGBT Type :

PT

Vce(on) (Max) @ Vge, Ic :

1.4V @ 15V, 30A

Lead Free :

Lead Free

Test Condition :

180V, 30A, 5 Ω, 15V

Turn On Delay Time :

20 ns

Case Connection :

COLLECTOR

Current - Collector Pulsed (Icm) :

240A

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Terminal Finish :

Tin (Sn)

Factory Lead Time :

4 Weeks

Turn Off Time-Nom (toff) :

162 ns

Gate-Emitter Voltage-Max :

20V

Turn On Time :

32 ns

Current Rating :

75A

Number of Terminations :

3

ECCN Code :

EAR99

Max Power Dissipation :

463W

Package / Case :

TO-247-3

Voltage - Rated DC :

300V

Input Type :

Standard

Power Dissipation :

463W

Weight :

6.39g

Turn-Off Delay Time :

135 ns

Max Collector Current :

75A

Number of Pins :

3

Td (on/off) @ 25°C :

20ns/135ns