FGH50N3
- Mfr.Part #
- FGH50N3
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- INSULATED GATE BIPOLAR TRANSISTO
- Stock
- 11,518
- In Stock :
- 11,518
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - IGBTs - Single
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 463W
- Published :
- 2002
- Terminal Finish :
- Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 75A
- Gate-Emitter Thr Voltage-Max :
- 5.5V
- Vce(on) (Max) @ Vge, Ic :
- 1.4V @ 15V, 30A
- Current - Collector Pulsed (Icm) :
- 240A
- Gate-Emitter Voltage-Max :
- 20V
- Max Collector Current :
- 75A
- Collector Emitter Saturation Voltage :
- 1.3V
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 300V
- HTS Code :
- 8541.29.00.95
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- Packaging :
- Tube
- Length :
- 15.87mm
- Turn On Delay Time :
- 20 ns
- Radiation Hardening :
- No
- Gate Charge :
- 180nC
- Switching Energy :
- 130μJ (on), 92μJ (off)
- Test Condition :
- 180V, 30A, 5 Ω, 15V
- Turn Off Time-Nom (toff) :
- 162 ns
- Rise Time :
- 15ns
- Transistor Application :
- POWER CONTROL
- Factory Lead Time :
- 4 Weeks
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Voltage - Rated DC :
- 300V
- Input Type :
- Standard
- Td (on/off) @ 25°C :
- 20ns/135ns
- Max Power Dissipation :
- 463W
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Package / Case :
- TO-247-3
- Polarity/Channel Type :
- N-Channel
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Height :
- 20.82mm
- Turn On Time :
- 32 ns
- Pbfree Code :
- yes
- Turn-Off Delay Time :
- 135 ns
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Additional Feature :
- LOW CONDUCTION LOSS
- Width :
- 4.82mm
- Collector Emitter Voltage (VCEO) :
- 300V
- IGBT Type :
- PT
- Case Connection :
- COLLECTOR
- Transistor Element Material :
- SILICON
- Weight :
- 6.39g
- Mounting Type :
- Through Hole
- Datasheets
- FGH50N3
FGH50N3 Documents

FGH50N3 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
FGH50N3 Description
The IGBT FGH50N3 uses on Semiconductor's planar technology and is ideal for many high-frequency and high-voltage switching applications, where low conduction loss is critical. The device has been optimized for intermediate frequency switching mode power supply.
FGH50N3 Features
? Low Saturation Voltage: VCE(sat) = 1.4 V Max
? Low EOFF = 6.6 uJ/A
? SCWT = 8 s @ = 125°C
? 300 V Switching SOA Capability
? Positive Temperature Coefficient above 50 A
? This is a Pb?Free Device
FGH50N3 Applications
? SMPS
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