FGH50T65UPD

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Turn On Time :

101 ns

Power - Max :

340W

Reverse Recovery Time :

53 ns

Pbfree Code :

yes

Td (on/off) @ 25°C :

32ns/160ns

Weight :

6.39g

Fall Time-Max (tf) :

29ns

ECCN Code :

EAR99

Packaging :

Tube

Collector Emitter Saturation Voltage :

2.1V

Lead Free :

Lead Free

Current - Collector Pulsed (Icm) :

150A

HTS Code :

8541.29.00.95

Case Connection :

COLLECTOR

Published :

2013

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

JEDEC-95 Code :

TO-247AB

Collector Emitter Voltage (VCEO) :

650V

Transistor Element Material :

SILICON

Width :

4.82mm

Test Condition :

400V, 50A, 6 Ω, 15V

Rise Time-Max :

77ns

Vce(on) (Max) @ Vge, Ic :

2.3V @ 15V, 50A

Terminal Finish :

Tin (Sn)

Collector Emitter Breakdown Voltage :

650V

Turn Off Time-Nom (toff) :

185 ns

IGBT Type :

Trench Field Stop

Transistor Application :

POWER CONTROL

Mounting Type :

Through Hole

Number of Pins :

3

Mount :

Through Hole

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Input Type :

Standard

Max Power Dissipation :

340W

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 5 days ago)

Gate-Emitter Thr Voltage-Max :

7.5V

JESD-609 Code :

e3

Factory Lead Time :

50 Weeks

Height :

20.82mm

Switching Energy :

2.7mJ (on), 740μJ (off)

Number of Terminations :

3

Package / Case :

TO-247-3

Max Collector Current :

100A

Gate Charge :

230nC

Polarity/Channel Type :

N-Channel

Length :

15.87mm

Number of Elements :

1

Gate-Emitter Voltage-Max :

25V