FGH50N3

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Max Power Dissipation :

463W

Collector Emitter Saturation Voltage :

1.3V

Weight :

6.39g

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Case Connection :

COLLECTOR

Number of Terminations :

3

Rise Time :

15ns

Mounting Type :

Through Hole

Mount :

Through Hole

Package / Case :

TO-247-3

HTS Code :

8541.29.00.95

Additional Feature :

LOW CONDUCTION LOSS

Collector Emitter Breakdown Voltage :

300V

Polarity/Channel Type :

N-Channel

Transistor Application :

POWER CONTROL

Switching Energy :

130μJ (on), 92μJ (off)

Terminal Finish :

Tin (Sn)

IGBT Type :

PT

Gate-Emitter Voltage-Max :

20V

Width :

4.82mm

Power Dissipation :

463W

Turn-Off Delay Time :

135 ns

Pbfree Code :

yes

Current - Collector Pulsed (Icm) :

240A

Gate Charge :

180nC

Turn On Time :

32 ns

Turn On Delay Time :

20 ns

Element Configuration :

Single

Height :

20.82mm

Length :

15.87mm

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Vce(on) (Max) @ Vge, Ic :

1.4V @ 15V, 30A

Factory Lead Time :

4 Weeks

Packaging :

Tube

Number of Elements :

1

Current Rating :

75A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Gate-Emitter Thr Voltage-Max :

5.5V

Turn Off Time-Nom (toff) :

162 ns

Published :

2002

ECCN Code :

EAR99

Input Type :

Standard

Max Collector Current :

75A

Lead Free :

Lead Free

Td (on/off) @ 25°C :

20ns/135ns

Collector Emitter Voltage (VCEO) :

300V

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Test Condition :

180V, 30A, 5 Ω, 15V

Voltage - Rated DC :

300V

RoHS Status :

ROHS3 Compliant