FGH50N6S2

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Packaging :

Tube

Element Configuration :

Single

Weight :

6.39g

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 5 days ago)

HTS Code :

8541.29.00.95

Reverse Recovery Time :

55ns

Current - Collector Pulsed (Icm) :

240A

Max Power Dissipation :

463W

Test Condition :

390V, 30A, 3 Ω, 15V

JESD-609 Code :

e3

Collector Emitter Breakdown Voltage :

600V

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Gate Charge :

70nC

Input Type :

Standard

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Turn Off Time-Nom (toff) :

180 ns

Voltage - Rated DC :

600V

Td (on/off) @ 25°C :

13ns/55ns

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 30A

Published :

2002

RoHS Status :

ROHS3 Compliant

Power Dissipation :

463W

Rise Time :

15ns

Lead Free :

Lead Free

Package / Case :

TO-247-3

Collector Emitter Voltage (VCEO) :

600V

Factory Lead Time :

4 Weeks

Pbfree Code :

yes

Number of Terminations :

3

Polarity/Channel Type :

N-Channel

ECCN Code :

EAR99

Current Rating :

75A

Max Collector Current :

75A

Collector Emitter Saturation Voltage :

1.9V

Switching Energy :

260μJ (on), 250μJ (off)

Turn On Time :

28 ns

Radiation Hardening :

No

Mount :

Through Hole

Transistor Application :

POWER CONTROL

REACH SVHC :

No SVHC