FGH50N6S2

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

ECCN Code :

EAR99

Turn On Time :

28 ns

Radiation Hardening :

No

Current - Collector Pulsed (Icm) :

240A

Operating Temperature :

-55°C~150°C TJ

Switching Energy :

260μJ (on), 250μJ (off)

HTS Code :

8541.29.00.95

Reverse Recovery Time :

55ns

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Td (on/off) @ 25°C :

13ns/55ns

Max Collector Current :

75A

Collector Emitter Saturation Voltage :

1.9V

Mount :

Through Hole

Collector Emitter Voltage (VCEO) :

600V

Terminal Finish :

Tin (Sn)

Package / Case :

TO-247-3

Input Type :

Standard

Current Rating :

75A

Transistor Application :

POWER CONTROL

Lead Free :

Lead Free

JESD-609 Code :

e3

Collector Emitter Breakdown Voltage :

600V

Max Power Dissipation :

463W

Published :

2002

Voltage - Rated DC :

600V

Rise Time :

15ns

Packaging :

Tube

Polarity/Channel Type :

N-Channel

Test Condition :

390V, 30A, 3 Ω, 15V

Number of Pins :

3

Mounting Type :

Through Hole

Power Dissipation :

463W

Turn Off Time-Nom (toff) :

180 ns

Pbfree Code :

yes

Factory Lead Time :

4 Weeks

Gate Charge :

70nC

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 30A

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 5 days ago)

Weight :

6.39g

Number of Terminations :

3

Element Configuration :

Single

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC