FGH20N60UFDTU

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Additional Feature :

LOW CONDUCTION LOSS

Current - Collector Pulsed (Icm) :

60A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Turn On Delay Time :

13 ns

HTS Code :

8541.29.00.95

Fall Time-Max (tf) :

64ns

Input Type :

Standard

ECCN Code :

EAR99

Published :

2013

Max Collector Current :

40A

Power - Max :

165W

Case Connection :

COLLECTOR

Gate Charge :

63nC

IGBT Type :

Field Stop

JESD-609 Code :

e3

Reverse Recovery Time :

34 ns

Radiation Hardening :

No

JEDEC-95 Code :

TO-247AB

Test Condition :

400V, 20A, 10 Ω, 15V

Turn On Time :

29 ns

Lead Free :

Lead Free

Packaging :

Tube

Td (on/off) @ 25°C :

13ns/87ns

Weight :

6.39g

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Length :

15.6mm

Element Configuration :

Single

Collector Emitter Saturation Voltage :

600V

Height :

20.6mm

Mount :

Through Hole

Polarity/Channel Type :

N-Channel

Package / Case :

TO-247-3

Pbfree Code :

yes

Transistor Application :

POWER CONTROL

Gate-Emitter Thr Voltage-Max :

6.5V

Mounting Type :

Through Hole

Max Power Dissipation :

165W

Turn Off Time-Nom (toff) :

155 ns

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 20A

Turn-Off Delay Time :

87 ns

Factory Lead Time :

4 Weeks

Switching Energy :

380μJ (on), 260μJ (off)

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Number of Terminations :

3

Collector Emitter Breakdown Voltage :

600V

Collector Emitter Voltage (VCEO) :

600V

Width :

4.7mm

Number of Elements :

1

Gate-Emitter Voltage-Max :

20V