FGH20N60SFDTU

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Collector Emitter Breakdown Voltage :

600V

Pbfree Code :

yes

Vce(on) (Max) @ Vge, Ic :

2.8V @ 15V, 20A

Length :

15.6mm

Turn On Delay Time :

13 ns

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Current - Collector Pulsed (Icm) :

60A

Transistor Application :

POWER CONTROL

ECCN Code :

EAR99

Gate-Emitter Voltage-Max :

20V

Collector Emitter Saturation Voltage :

600V

Fall Time-Max (tf) :

48ns

Mounting Type :

Through Hole

Radiation Hardening :

No

IGBT Type :

Field Stop

Collector Emitter Voltage (VCEO) :

600V

Number of Elements :

1

Test Condition :

400V, 20A, 10 Ω, 15V

Height :

20.6mm

REACH SVHC :

No SVHC

Power - Max :

165W

Additional Feature :

LOW CONDUCTION LOSS

Max Collector Current :

40A

Td (on/off) @ 25°C :

13ns/90ns

JEDEC-95 Code :

TO-247AB

HTS Code :

8541.29.00.95

JESD-609 Code :

e3

Width :

4.7mm

Factory Lead Time :

5 Weeks

Element Configuration :

Single

Switching Energy :

370μJ (on), 160μJ (off)

Turn-Off Delay Time :

90 ns

Number of Terminations :

3

Case Connection :

COLLECTOR

Number of Pins :

3

Max Power Dissipation :

165W

Gate Charge :

65nC

Mount :

Through Hole

Packaging :

Tube

Turn Off Time-Nom (toff) :

123 ns

Rise Time :

16ns

Turn On Time :

28 ns

Published :

2008

Reverse Recovery Time :

34 ns

Input Type :

Standard

Gate-Emitter Thr Voltage-Max :

6.5V

Weight :

6.39g

Operating Temperature :

-55°C~150°C TJ

Polarity/Channel Type :

N-Channel

Package / Case :

TO-247-3