FGH20N6S2

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Mfr.Part #
FGH20N6S2
Manufacturer
onsemi
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT 600V 28A 125W TO247
Stock
33,268
In Stock :
33,268

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Manufacturer :
onsemi
Product Category :
Transistors - IGBTs - Single
Switching Energy :
25μJ (on), 58μJ (off)
Collector Emitter Breakdown Voltage :
600V
Published :
2003
Test Condition :
390V, 7A, 25 Ω, 15V
Element Configuration :
Single
Vce(on) (Max) @ Vge, Ic :
2.7V @ 15V, 7A
Gate Charge :
30nC
Collector Emitter Saturation Voltage :
2.2V
Max Collector Current :
28A
Current Rating :
28A
Td (on/off) @ 25°C :
7.7ns/87ns
Mount :
Through Hole
Rise Time :
4.5ns
RoHS Status :
RoHS Compliant
Operating Temperature :
-55°C~150°C TJ
Lead Free :
Lead Free
Collector Emitter Voltage (VCEO) :
600V
Input Type :
Standard
Current - Collector Pulsed (Icm) :
40A
Voltage - Rated DC :
600V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Through Hole
Power Dissipation :
125W
Packaging :
Tube
Max Power Dissipation :
125W
Package / Case :
TO-247-3
Datasheets
FGH20N6S2
Introducing Transistors - IGBTs - Single onsemi FGH20N6S2 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-247-3, FGH20N6S2 pinout, FGH20N6S2 datasheet PDF, FGH20N6S2 amp .Beyond Transistors - IGBTs - Single onsemi FGH20N6S2 ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FGH20N6S2


FGH20N6S2 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at

FGH20N6S2 Description


FGH20N6S2 is a type of 600V, SMPS II Series N-Channel IGBT with an Anti-Parallel StealthTM diode developed by ON Semiconductor. It is characterized by the fast switching speed of the SMPS IGBTs, lower gate charge, lower plateau voltage, and high avalanche capability (UIS). Thus it is ideally suitable for high-voltage switched mode power supply applications. Moreover, the FGH20N6S2 is able to shorten delay times and reduce the power requirement of the gate drive. 



FGH20N6S2 Features


Fast switching speed of the SMPS IGBTs

Lower gate charge

Lower plateau voltage

High avalanche capability (UIS)



FGH20N6S2 Applications


Power Factor Correction (PFC) circuits

Full bridge topologies

Half bridge topologies

Push-Pull circuits

Uninterruptible power supplies

Zero voltage and zero current switching circuits


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