FGH25N120FTDS

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Factory Lead Time :

5 Weeks

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Max Power Dissipation :

313W

Polarity/Channel Type :

N-Channel

Collector Emitter Voltage (VCEO) :

1.2kV

Package / Case :

TO-247-3

Gate-Emitter Voltage-Max :

25V

Transistor Application :

POWER CONTROL

Reverse Recovery Time :

535 ns

Packaging :

Tube

Radiation Hardening :

No

Switching Energy :

1.42mJ (on), 1.16mJ (off)

Vce(on) (Max) @ Vge, Ic :

2V @ 15V, 25A

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Weight :

6.39g

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Height :

20.82mm

Number of Elements :

1

Current - Collector Pulsed (Icm) :

75A

IGBT Type :

Trench Field Stop

Published :

2016

Gate Charge :

169nC

Width :

4.82mm

ECCN Code :

EAR99

Input Type :

Standard

Number of Terminations :

3

JEDEC-95 Code :

TO-247AB

Pbfree Code :

yes

Element Configuration :

Single

HTS Code :

8541.29.00.95

Test Condition :

600V, 25A, 10 Ω, 15V

Case Connection :

COLLECTOR

Turn Off Time-Nom (toff) :

299 ns

Max Collector Current :

50A

Length :

15.87mm

Voltage - Collector Emitter Breakdown (Max) :

1200V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Td (on/off) @ 25°C :

26ns/151ns

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Power - Max :

313W

Mount :

Through Hole

Collector Emitter Breakdown Voltage :

1.2kV

Turn On Time :

63 ns

Gate-Emitter Thr Voltage-Max :

7.5V