FGA6540WDF

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Power - Max :

238W

Current - Collector Pulsed (Icm) :

120A

HTS Code :

8541.29.00.95

Weight :

6.401g

ECCN Code :

EAR99

Pbfree Code :

yes

Packaging :

Tube

Collector Emitter Breakdown Voltage :

650V

Vce(on) (Max) @ Vge, Ic :

2.3V @ 15V, 40A

Test Condition :

400V, 40A, 6 Ω, 15V

Published :

2016

Input Type :

Standard

Operating Temperature :

-55°C~175°C TJ

Switching Energy :

1.37mJ (on), 250μJ (off)

Gate Charge :

55.5nC

Package / Case :

TO-3P-3, SC-65-3

Reverse Recovery Time :

101 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Power Dissipation :

238W

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Collector Emitter Saturation Voltage :

1.8V

Mount :

Through Hole

Mounting Type :

Through Hole

Element Configuration :

Single

Td (on/off) @ 25°C :

16.8ns/54.4ns

IGBT Type :

Trench Field Stop

Collector Emitter Voltage (VCEO) :

2.3V

Factory Lead Time :

4 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Max Collector Current :

80A