FGA6540WDF

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Element Configuration :

Single

Switching Energy :

1.37mJ (on), 250μJ (off)

Collector Emitter Saturation Voltage :

1.8V

Factory Lead Time :

4 Weeks

Collector Emitter Voltage (VCEO) :

2.3V

Max Collector Current :

80A

Max Power Dissipation :

238W

Mount :

Through Hole

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reverse Recovery Time :

101 ns

IGBT Type :

Trench Field Stop

Input Type :

Standard

Package / Case :

TO-3P-3, SC-65-3

Td (on/off) @ 25°C :

16.8ns/54.4ns

Mounting Type :

Through Hole

Test Condition :

400V, 40A, 6 Ω, 15V

Collector Emitter Breakdown Voltage :

650V

Weight :

6.401g

Power - Max :

238W

Vce(on) (Max) @ Vge, Ic :

2.3V @ 15V, 40A

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~175°C TJ

Published :

2016

Gate Charge :

55.5nC

Current - Collector Pulsed (Icm) :

120A

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

HTS Code :

8541.29.00.95

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Packaging :

Tube