FGA6530WDF

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

ECCN Code :

EAR99

Packaging :

Tube

Test Condition :

400V, 30A, 6 Ω, 15V

Max Power Dissipation :

176W

Terminal Finish :

Tin (Sn)

Collector Emitter Breakdown Voltage :

650V

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Through Hole

HTS Code :

8541.29.00.95

Vce(on) (Max) @ Vge, Ic :

2.2V @ 15V, 30A

Input Type :

Standard

Pbfree Code :

yes

Reverse Recovery Time :

81 ns

Gate Charge :

37.4nC

Current - Collector Pulsed (Icm) :

90A

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

2.2V

IGBT Type :

Trench Field Stop

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

6.401g

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Number of Pins :

3

Mounting Type :

Through Hole

Factory Lead Time :

6 Weeks

Max Collector Current :

60A

Package / Case :

TO-3P-3, SC-65-3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power - Max :

176W

Td (on/off) @ 25°C :

12ns/42.4ns

Switching Energy :

960μJ (on), 162μJ (off)

Published :

2015

Operating Temperature :

-55°C~175°C TJ

Element Configuration :

Single