FGA60N65SMD
- Mfr.Part #
- FGA60N65SMD
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- IGBT FIELD STOP 650V 120A TO3P
- Stock
- 267
- In Stock :
- 267
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - IGBTs - Single
- Collector Emitter Voltage (VCEO) :
- 650V
- IGBT Type :
- Field Stop
- Height :
- 20.1mm
- Element Configuration :
- Single
- Fall Time-Max (tf) :
- 68ns
- Switching Energy :
- 1.54mJ (on), 450μJ (off)
- Gate-Emitter Voltage-Max :
- 20V
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Rise Time-Max :
- 70ns
- Transistor Application :
- POWER CONTROL
- Reverse Recovery Time :
- 47 ns
- Mount :
- Through Hole
- HTS Code :
- 8541.29.00.95
- Gate-Emitter Thr Voltage-Max :
- 6V
- Weight :
- 6.401g
- Lead Free :
- Lead Free
- Gate Charge :
- 189nC
- Vce(on) (Max) @ Vge, Ic :
- 2.5V @ 15V, 60A
- Input Type :
- Standard
- Collector Emitter Saturation Voltage :
- 1.9V
- Number of Elements :
- 1
- Width :
- 5mm
- Operating Temperature :
- -55°C~175°C TJ
- Collector Emitter Breakdown Voltage :
- 650V
- Length :
- 15.8mm
- Published :
- 2008
- Current - Collector Pulsed (Icm) :
- 180A
- Package / Case :
- TO-3P-3, SC-65-3
- Power - Max :
- 600W
- Test Condition :
- 400V, 60A, 3 Ω, 15V
- Number of Terminations :
- 3
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Td (on/off) @ 25°C :
- 18ns/104ns
- Turn On Delay Time :
- 18 ns
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin (Sn)
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 120A
- Pbfree Code :
- yes
- Polarity/Channel Type :
- N-Channel
- JESD-609 Code :
- e3
- Turn-Off Delay Time :
- 104 ns
- Factory Lead Time :
- 7 Weeks
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 600W
- Additional Feature :
- LOW CONDUCTION LOSS
- Datasheets
- FGA60N65SMD
FGA60N65SMD Documents

FGA60N65SMD datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
FGA60N65SMD Description
ON Semiconductor's new field stop 2nd generation IGBTs, which use revolutionary field stop IGBT technology, provide the best performance for solar inverter, UPS, welder, telecom, ESS, and PFC applications that require low conduction and switching losses.
FGA60N65SMD Features
-
RoHS compliant
-
High current capability
-
Fast switching: EOFF =7.5uJ/A
-
Tightened parameter distribution
-
Maximum junction temperature : TJ =175 °C
-
Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC = 60A
-
Positive temperature co-efficient for easy parallel operating
FGA60N65SMD Applications
-
UPS
-
PFC
-
Welder
-
Other Industrial
-
Uninterruptible Power Supply
-
Energy Generation & Distribution
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