FGA60N65SMD

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

IGBT Type :

Field Stop

Collector Emitter Saturation Voltage :

1.9V

Max Collector Current :

120A

HTS Code :

8541.29.00.95

Max Power Dissipation :

600W

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tube

Gate-Emitter Thr Voltage-Max :

6V

Polarity/Channel Type :

N-Channel

Gate Charge :

189nC

Power - Max :

600W

Td (on/off) @ 25°C :

18ns/104ns

Collector Emitter Voltage (VCEO) :

650V

Mounting Type :

Through Hole

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 60A

Height :

20.1mm

Gate-Emitter Voltage-Max :

20V

Length :

15.8mm

Published :

2008

Additional Feature :

LOW CONDUCTION LOSS

Turn-Off Delay Time :

104 ns

Element Configuration :

Single

Pbfree Code :

yes

Lead Free :

Lead Free

Transistor Application :

POWER CONTROL

Rise Time-Max :

70ns

JESD-609 Code :

e3

ECCN Code :

EAR99

Test Condition :

400V, 60A, 3 Ω, 15V

Switching Energy :

1.54mJ (on), 450μJ (off)

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Collector Emitter Breakdown Voltage :

650V

Terminal Finish :

Tin (Sn)

Mount :

Through Hole

Width :

5mm

Current - Collector Pulsed (Icm) :

180A

Reverse Recovery Time :

47 ns

Turn On Delay Time :

18 ns

Factory Lead Time :

7 Weeks

Weight :

6.401g

Number of Pins :

3

Number of Elements :

1

Number of Terminations :

3

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Input Type :

Standard

Package / Case :

TO-3P-3, SC-65-3

Radiation Hardening :

No

Fall Time-Max (tf) :

68ns