FGA60N65SMD

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Collector Emitter Voltage (VCEO) :

650V

IGBT Type :

Field Stop

Height :

20.1mm

Element Configuration :

Single

Fall Time-Max (tf) :

68ns

Switching Energy :

1.54mJ (on), 450μJ (off)

Gate-Emitter Voltage-Max :

20V

Radiation Hardening :

No

Number of Pins :

3

Rise Time-Max :

70ns

Transistor Application :

POWER CONTROL

Reverse Recovery Time :

47 ns

Mount :

Through Hole

HTS Code :

8541.29.00.95

Gate-Emitter Thr Voltage-Max :

6V

Weight :

6.401g

Lead Free :

Lead Free

Gate Charge :

189nC

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 60A

Input Type :

Standard

Collector Emitter Saturation Voltage :

1.9V

Number of Elements :

1

Width :

5mm

Operating Temperature :

-55°C~175°C TJ

Collector Emitter Breakdown Voltage :

650V

Length :

15.8mm

Published :

2008

Current - Collector Pulsed (Icm) :

180A

Package / Case :

TO-3P-3, SC-65-3

Power - Max :

600W

Test Condition :

400V, 60A, 3 Ω, 15V

Number of Terminations :

3

Packaging :

Tube

Transistor Element Material :

SILICON

Td (on/off) @ 25°C :

18ns/104ns

Turn On Delay Time :

18 ns

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

120A

Pbfree Code :

yes

Polarity/Channel Type :

N-Channel

JESD-609 Code :

e3

Turn-Off Delay Time :

104 ns

Factory Lead Time :

7 Weeks

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

600W

Additional Feature :

LOW CONDUCTION LOSS