FDS4953

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

55m Ω @ 5A, 10V

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Pbfree Code :

yes

Additional Feature :

LOGIC LEVEL COMPATIBLE

Terminal Form :

Gull wing

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.055Ohm

RoHS Status :

ROHS3 Compliant

FET Feature :

Logic Level Gate

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

JESD-609 Code :

e3

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

20A

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

5A

Number of Elements :

2

Input Capacitance (Ciss) (Max) @ Vds :

528pF @ 15V

Series :

PowerTrench®

DS Breakdown Voltage-Min :

30V

JESD-30 Code :

R-PDSO-G8

Current - Continuous Drain (Id) @ 25°C :

5A

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

3V @ 250µA

Power - Max :

900mW

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 5V

Pin Count :

8

Qualification Status :

COMMERCIAL

Surface Mount :

yes

Terminal Finish :

MATTE TIN

FET Type :

2 P-Channel (Dual)

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

8

Drain to Source Voltage (Vdss) :

30V