FDS4080N7
- Mfr.Part #
- FDS4080N7
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 13A 8SO
- Stock
- 11,820
- In Stock :
- 11,820
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 10m Ω @ 13A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.75pF @ 20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Pulsed Drain Current-Max (IDM) :
- 60A
- Power Dissipation-Max :
- 3.9W Ta
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- JESD-30 Code :
- R-PDSO-G8
- Series :
- PowerTrench®
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Reach Compliance Code :
- Unknown
- Operating Temperature :
- -55°C~150°C TJ
- Vgs (Max) :
- ±20V
- Drain Current-Max (Abs) (ID) :
- 13A
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e4
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminations :
- 8
- Terminal Finish :
- NICKEL PALLADIUM GOLD
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Position :
- Dual
- Pin Count :
- 8
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 0.01Ohm
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 40nC @ 10V
- Surface Mount :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 13A Ta
- RoHS Status :
- ROHS3 Compliant
- Qualification Status :
- COMMERCIAL
- Pbfree Code :
- yes
- Avalanche Energy Rating (Eas) :
- 200 mJ
- Case Connection :
- DRAIN
- Drain to Source Voltage (Vdss) :
- 40V
- DS Breakdown Voltage-Min :
- 40V
- Terminal Form :
- Gull wing
- Transistor Application :
- SWITCHING
- Datasheets
- FDS4080N7
FDS4080N7 Documents

N-Channel Tape & Reel (TR) 10m Ω @ 13A, 10V ±20V 1.75pF @ 20V 40nC @ 10V 40V 8-SOIC (0.154, 3.90mm Width)
FDS4080N7 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 200 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1.75pF @ 20V maximal input capacitance.A device can conduct a maximum continuous current of [13A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 60A.The DS breakdown voltage should be maintained above 40V to maintain normal operation.To operate this transistor, you will need a 40V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
FDS4080N7 Features
the avalanche energy rating (Eas) is 200 mJ
based on its rated peak drain current 60A.
a 40V drain to source voltage (Vdss)
FDS4080N7 Applications
There are a lot of Rochester Electronics, LLC
FDS4080N7 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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