FDS4080N7

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Mfr.Part #
FDS4080N7
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N-CH 40V 13A 8SO
Stock
39,870
In Stock :
39,870

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Peak Reflow Temperature (Cel) :
260
Vgs (Max) :
±20V
Transistor Element Material :
SILICON
Drain-source On Resistance-Max :
0.01Ohm
Vgs(th) (Max) @ Id :
5V @ 250μA
JESD-30 Code :
R-PDSO-G8
Series :
PowerTrench®
DS Breakdown Voltage-Min :
40V
Input Capacitance (Ciss) (Max) @ Vds :
1.75pF @ 20V
Packaging :
Tape and Reel (TR)
FET Type :
N-Channel
Terminal Finish :
NICKEL PALLADIUM GOLD
Number of Elements :
1
Number of Terminations :
8
Configuration :
SINGLE WITH BUILT-IN DIODE
Current - Continuous Drain (Id) @ 25°C :
13A Ta
Surface Mount :
yes
Pulsed Drain Current-Max (IDM) :
60A
Drain Current-Max (Abs) (ID) :
13A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rds On (Max) @ Id, Vgs :
10m Ω @ 13A, 10V
Drain to Source Voltage (Vdss) :
40V
Mounting Type :
Surface Mount
Avalanche Energy Rating (Eas) :
200 mJ
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Power Dissipation-Max :
3.9W Ta
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
RoHS Status :
ROHS3 Compliant
Pin Count :
8
Operating Mode :
ENHANCEMENT MODE
Gate Charge (Qg) (Max) @ Vgs :
40nC @ 10V
Pbfree Code :
yes
Terminal Form :
Gull wing
Qualification Status :
COMMERCIAL
Drive Voltage (Max Rds On,Min Rds On) :
10V
Operating Temperature :
-55°C~150°C TJ
JESD-609 Code :
e4
Case Connection :
DRAIN
Terminal Position :
Dual
Reach Compliance Code :
Unknown
Transistor Application :
SWITCHING
Introducing Transistors - FETs, MOSFETs - Single onsemi FDS4080N7 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:8, Mounting Type:Surface Mount, Package / Case:8-SOIC (0.154, 3.90mm Width), Operating Temperature:-55°C~150°C TJ, FDS4080N7 pinout, FDS4080N7 datasheet PDF, FDS4080N7 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDS4080N7 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDS4080N7


N-Channel Tape & Reel (TR) 10m Ω @ 13A, 10V ±20V 1.75pF @ 20V 40nC @ 10V 40V 8-SOIC (0.154, 3.90mm Width)

FDS4080N7 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 200 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1.75pF @ 20V maximal input capacitance.A device can conduct a maximum continuous current of [13A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 60A.The DS breakdown voltage should be maintained above 40V to maintain normal operation.To operate this transistor, you will need a 40V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

FDS4080N7 Features


the avalanche energy rating (Eas) is 200 mJ
based on its rated peak drain current 60A.
a 40V drain to source voltage (Vdss)


FDS4080N7 Applications


There are a lot of Rochester Electronics, LLC
FDS4080N7 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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