FDS4080N7

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Mfr.Part #
FDS4080N7
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N-CH 40V 13A 8SO
Stock
39,870
In Stock :
39,870

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Elements :
1
Reach Compliance Code :
Unknown
Operating Mode :
ENHANCEMENT MODE
Surface Mount :
yes
Input Capacitance (Ciss) (Max) @ Vds :
1.75pF @ 20V
Series :
PowerTrench®
Pbfree Code :
yes
Drain Current-Max (Abs) (ID) :
13A
JESD-609 Code :
e4
Terminal Form :
Gull wing
Gate Charge (Qg) (Max) @ Vgs :
40nC @ 10V
Mounting Type :
Surface Mount
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
DS Breakdown Voltage-Min :
40V
Qualification Status :
COMMERCIAL
Pulsed Drain Current-Max (IDM) :
60A
Current - Continuous Drain (Id) @ 25°C :
13A Ta
Pin Count :
8
Packaging :
Tape and Reel (TR)
Drive Voltage (Max Rds On,Min Rds On) :
10V
RoHS Status :
ROHS3 Compliant
Configuration :
SINGLE WITH BUILT-IN DIODE
Drain to Source Voltage (Vdss) :
40V
Vgs(th) (Max) @ Id :
5V @ 250μA
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Rds On (Max) @ Id, Vgs :
10m Ω @ 13A, 10V
Avalanche Energy Rating (Eas) :
200 mJ
Drain-source On Resistance-Max :
0.01Ohm
Terminal Position :
Dual
FET Type :
N-Channel
Number of Terminations :
8
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
Case Connection :
DRAIN
JESD-30 Code :
R-PDSO-G8
Operating Temperature :
-55°C~150°C TJ
Terminal Finish :
NICKEL PALLADIUM GOLD
Peak Reflow Temperature (Cel) :
260
Power Dissipation-Max :
3.9W Ta
Transistor Application :
SWITCHING
Vgs (Max) :
±20V
Introducing Transistors - FETs, MOSFETs - Single onsemi FDS4080N7 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:8-SOIC (0.154, 3.90mm Width), Number of Terminations:8, Operating Temperature:-55°C~150°C TJ, FDS4080N7 pinout, FDS4080N7 datasheet PDF, FDS4080N7 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDS4080N7 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDS4080N7


N-Channel Tape & Reel (TR) 10m Ω @ 13A, 10V ±20V 1.75pF @ 20V 40nC @ 10V 40V 8-SOIC (0.154, 3.90mm Width)

FDS4080N7 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 200 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1.75pF @ 20V maximal input capacitance.A device can conduct a maximum continuous current of [13A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 60A.The DS breakdown voltage should be maintained above 40V to maintain normal operation.To operate this transistor, you will need a 40V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

FDS4080N7 Features


the avalanche energy rating (Eas) is 200 mJ
based on its rated peak drain current 60A.
a 40V drain to source voltage (Vdss)


FDS4080N7 Applications


There are a lot of Rochester Electronics, LLC
FDS4080N7 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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