FDS4080N7

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Mfr.Part #
FDS4080N7
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N-CH 40V 13A 8SO
Stock
39,870
In Stock :
39,870

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-609 Code :
e4
Drain to Source Voltage (Vdss) :
40V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Qualification Status :
COMMERCIAL
Packaging :
Tape and Reel (TR)
RoHS Status :
ROHS3 Compliant
Configuration :
SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max :
0.01Ohm
Gate Charge (Qg) (Max) @ Vgs :
40nC @ 10V
Drain Current-Max (Abs) (ID) :
13A
Series :
PowerTrench®
Pulsed Drain Current-Max (IDM) :
60A
Terminal Finish :
NICKEL PALLADIUM GOLD
Number of Elements :
1
Terminal Form :
Gull wing
Drive Voltage (Max Rds On,Min Rds On) :
10V
Avalanche Energy Rating (Eas) :
200 mJ
Power Dissipation-Max :
3.9W Ta
Rds On (Max) @ Id, Vgs :
10m Ω @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds :
1.75pF @ 20V
Operating Temperature :
-55°C~150°C TJ
Mounting Type :
Surface Mount
Surface Mount :
yes
DS Breakdown Voltage-Min :
40V
FET Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Case Connection :
DRAIN
Current - Continuous Drain (Id) @ 25°C :
13A Ta
Pin Count :
8
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
5V @ 250μA
Reach Compliance Code :
Unknown
JESD-30 Code :
R-PDSO-G8
Terminal Position :
Dual
Operating Mode :
ENHANCEMENT MODE
Pbfree Code :
yes
Peak Reflow Temperature (Cel) :
260
Transistor Element Material :
SILICON
Transistor Application :
SWITCHING
Number of Terminations :
8
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Datasheets
FDS4080N7
Introducing Transistors - FETs, MOSFETs - Single onsemi FDS4080N7 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Terminations:8, Package / Case:8-SOIC (0.154, 3.90mm Width), FDS4080N7 pinout, FDS4080N7 datasheet PDF, FDS4080N7 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDS4080N7 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDS4080N7


N-Channel Tape & Reel (TR) 10m Ω @ 13A, 10V ±20V 1.75pF @ 20V 40nC @ 10V 40V 8-SOIC (0.154, 3.90mm Width)

FDS4080N7 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 200 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1.75pF @ 20V maximal input capacitance.A device can conduct a maximum continuous current of [13A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 60A.The DS breakdown voltage should be maintained above 40V to maintain normal operation.To operate this transistor, you will need a 40V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

FDS4080N7 Features


the avalanche energy rating (Eas) is 200 mJ
based on its rated peak drain current 60A.
a 40V drain to source voltage (Vdss)


FDS4080N7 Applications


There are a lot of Rochester Electronics, LLC
FDS4080N7 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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