FDS4072N7
- Mfr.Part #
- FDS4072N7
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 12.4A 8SO
- Stock
- 9,775
- In Stock :
- 9,775
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e4
- Drain-source On Resistance-Max :
- 0.009Ohm
- Pulsed Drain Current-Max (IDM) :
- 60A
- Surface Mount :
- yes
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 8
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- DS Breakdown Voltage-Min :
- 40V
- Avalanche Energy Rating (Eas) :
- 200 mJ
- FET Type :
- N-Channel
- Terminal Position :
- Dual
- Drain Current-Max (Abs) (ID) :
- 12.4A
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±12V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pin Count :
- 8
- Input Capacitance (Ciss) (Max) @ Vds :
- 4.299pF @ 20V
- Power Dissipation-Max :
- 3W Ta
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- COMMERCIAL
- Peak Reflow Temperature (Cel) :
- 260
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Current - Continuous Drain (Id) @ 25°C :
- 12.4A Ta
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Rds On (Max) @ Id, Vgs :
- 9m Ω @ 13.7A, 10V
- JESD-30 Code :
- R-PDSO-G8
- Series :
- PowerTrench®
- Drain to Source Voltage (Vdss) :
- 40V
- Case Connection :
- DRAIN
- Pbfree Code :
- yes
- Terminal Finish :
- NICKEL PALLADIUM GOLD
- Terminal Form :
- Gull wing
- Gate Charge (Qg) (Max) @ Vgs :
- 46nC @ 4.5V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Mounting Type :
- Surface Mount
- Reach Compliance Code :
- Unknown
- Datasheets
- FDS4072N7

N-Channel Tape & Reel (TR) 9m Ω @ 13.7A, 10V ±12V 4.299pF @ 20V 46nC @ 4.5V 40V 8-SOIC (0.154, 3.90mm Width)
FDS4072N7 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 200 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4.299pF @ 20V.12.4A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 60A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 40V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 40V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
FDS4072N7 Features
the avalanche energy rating (Eas) is 200 mJ
based on its rated peak drain current 60A.
a 40V drain to source voltage (Vdss)
FDS4072N7 Applications
There are a lot of Rochester Electronics, LLC
FDS4072N7 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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