FDS4072N7
- Mfr.Part #
- FDS4072N7
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 12.4A 8SO
- Stock
- 9,775
- In Stock :
- 9,775
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Voltage (Vdss) :
- 40V
- Drain-source On Resistance-Max :
- 0.009Ohm
- FET Type :
- N-Channel
- Series :
- PowerTrench®
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Power Dissipation-Max :
- 3W Ta
- Pbfree Code :
- yes
- JESD-30 Code :
- R-PDSO-G8
- Packaging :
- Tape and Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs :
- 46nC @ 4.5V
- Terminal Finish :
- NICKEL PALLADIUM GOLD
- DS Breakdown Voltage-Min :
- 40V
- Peak Reflow Temperature (Cel) :
- 260
- Vgs (Max) :
- ±12V
- Surface Mount :
- yes
- Number of Terminations :
- 8
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Avalanche Energy Rating (Eas) :
- 200 mJ
- Drain Current-Max (Abs) (ID) :
- 12.4A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- COMMERCIAL
- Case Connection :
- DRAIN
- Rds On (Max) @ Id, Vgs :
- 9m Ω @ 13.7A, 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- Pulsed Drain Current-Max (IDM) :
- 60A
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Transistor Element Material :
- SILICON
- Reach Compliance Code :
- Unknown
- Input Capacitance (Ciss) (Max) @ Vds :
- 4.299pF @ 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e4
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 8
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- Current - Continuous Drain (Id) @ 25°C :
- 12.4A Ta
- Datasheets
- FDS4072N7
FDS4072N7 Documents

N-Channel Tape & Reel (TR) 9m Ω @ 13.7A, 10V ±12V 4.299pF @ 20V 46nC @ 4.5V 40V 8-SOIC (0.154, 3.90mm Width)
FDS4072N7 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 200 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4.299pF @ 20V.12.4A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 60A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 40V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 40V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
FDS4072N7 Features
the avalanche energy rating (Eas) is 200 mJ
based on its rated peak drain current 60A.
a 40V drain to source voltage (Vdss)
FDS4072N7 Applications
There are a lot of Rochester Electronics, LLC
FDS4072N7 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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