FDS4070N3
- Mfr.Part #
- FDS4070N3
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 15.3A 8SO
- Stock
- 11,189
- In Stock :
- 11,189
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 7.5m Ω @ 15.3A, 10V
- Packaging :
- Tape and Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs :
- 67nC @ 10V
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 8
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Drain-source On Resistance-Max :
- 0.0075Ohm
- Transistor Application :
- SWITCHING
- Case Connection :
- DRAIN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 15.3A Ta
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- FET Type :
- N-Channel
- Surface Mount :
- yes
- Pbfree Code :
- yes
- Pulsed Drain Current-Max (IDM) :
- 60A
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 3W Ta
- Peak Reflow Temperature (Cel) :
- 260
- DS Breakdown Voltage-Min :
- 40V
- Qualification Status :
- COMMERCIAL
- Number of Terminations :
- 8
- JESD-30 Code :
- R-PDSO-G8
- Reach Compliance Code :
- Unknown
- Input Capacitance (Ciss) (Max) @ Vds :
- 2.819pF @ 20V
- Drain to Source Voltage (Vdss) :
- 40V
- Mounting Type :
- Surface Mount
- Series :
- PowerTrench®
- Terminal Finish :
- NICKEL PALLADIUM GOLD
- Vgs (Max) :
- ±20V
- Drain Current-Max (Abs) (ID) :
- 15.3A
- Number of Elements :
- 1
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Avalanche Energy Rating (Eas) :
- 310 mJ
- JESD-609 Code :
- e4
- Datasheets
- FDS4070N3

N-Channel Tape & Reel (TR) 7.5m Ω @ 15.3A, 10V ±20V 2.819pF @ 20V 67nC @ 10V 40V 8-SOIC (0.154, 3.90mm Width)
FDS4070N3 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 310 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2.819pF @ 20V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 15.3A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 60A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 40V in order to maintain normal operation.Operating this transistor requires a 40V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
FDS4070N3 Features
the avalanche energy rating (Eas) is 310 mJ
based on its rated peak drain current 60A.
a 40V drain to source voltage (Vdss)
FDS4070N3 Applications
There are a lot of Rochester Electronics, LLC
FDS4070N3 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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