FDS4070N3

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Mfr.Part #
FDS4070N3
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N-CH 40V 15.3A 8SO
Stock
11,189
In Stock :
11,189

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
7.5m Ω @ 15.3A, 10V
Packaging :
Tape and Reel (TR)
Gate Charge (Qg) (Max) @ Vgs :
67nC @ 10V
Terminal Form :
Gull wing
RoHS Status :
ROHS3 Compliant
Pin Count :
8
Transistor Element Material :
SILICON
Terminal Position :
Dual
Drain-source On Resistance-Max :
0.0075Ohm
Transistor Application :
SWITCHING
Case Connection :
DRAIN
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Current - Continuous Drain (Id) @ 25°C :
15.3A Ta
Configuration :
SINGLE WITH BUILT-IN DIODE
FET Type :
N-Channel
Surface Mount :
yes
Pbfree Code :
yes
Pulsed Drain Current-Max (IDM) :
60A
Operating Mode :
ENHANCEMENT MODE
Operating Temperature :
-55°C~150°C TJ
Vgs(th) (Max) @ Id :
5V @ 250μA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
3W Ta
Peak Reflow Temperature (Cel) :
260
DS Breakdown Voltage-Min :
40V
Qualification Status :
COMMERCIAL
Number of Terminations :
8
JESD-30 Code :
R-PDSO-G8
Reach Compliance Code :
Unknown
Input Capacitance (Ciss) (Max) @ Vds :
2.819pF @ 20V
Drain to Source Voltage (Vdss) :
40V
Mounting Type :
Surface Mount
Series :
PowerTrench®
Terminal Finish :
NICKEL PALLADIUM GOLD
Vgs (Max) :
±20V
Drain Current-Max (Abs) (ID) :
15.3A
Number of Elements :
1
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Avalanche Energy Rating (Eas) :
310 mJ
JESD-609 Code :
e4
Datasheets
FDS4070N3
Introducing Transistors - FETs, MOSFETs - Single onsemi FDS4070N3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:8, Mounting Type:Surface Mount, Package / Case:8-SOIC (0.154, 3.90mm Width), FDS4070N3 pinout, FDS4070N3 datasheet PDF, FDS4070N3 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDS4070N3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDS4070N3


N-Channel Tape & Reel (TR) 7.5m Ω @ 15.3A, 10V ±20V 2.819pF @ 20V 67nC @ 10V 40V 8-SOIC (0.154, 3.90mm Width)

FDS4070N3 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 310 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2.819pF @ 20V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 15.3A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 60A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 40V in order to maintain normal operation.Operating this transistor requires a 40V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

FDS4070N3 Features


the avalanche energy rating (Eas) is 310 mJ
based on its rated peak drain current 60A.
a 40V drain to source voltage (Vdss)


FDS4070N3 Applications


There are a lot of Rochester Electronics, LLC
FDS4070N3 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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