FDS4935BZ
- Mfr.Part #
- FDS4935BZ
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- SMALL SIGNAL FIELD-EFFECT TRANSI
- Stock
- 8,085
- In Stock :
- 8,085
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Drain to Source Voltage (Vdss) :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 8
- Power - Max :
- 900mW
- Drain to Source Breakdown Voltage :
- -30V
- Lead Free :
- Lead Free
- Rise Time :
- 13ns
- Current Rating :
- -6.9A
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Tin (Sn)
- Continuous Drain Current (ID) :
- -6.9A
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Voltage - Rated DC :
- -30V
- Series :
- PowerTrench®
- Threshold Voltage :
- -1.9V
- Number of Elements :
- 2
- FET Feature :
- Logic Level Gate
- Termination :
- SMD/SMT
- Height :
- 1.75mm
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 187mg
- Resistance :
- 22mOhm
- Width :
- 4mm
- JESD-609 Code :
- e3
- Turn On Delay Time :
- 12 ns
- Max Power Dissipation :
- 1.6W
- REACH SVHC :
- No SVHC
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Factory Lead Time :
- 10 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 1.6W
- Fall Time (Typ) :
- 13 ns
- Number of Channels :
- 2
- Current - Continuous Drain (Id) @ 25°C :
- 6.9A
- Input Capacitance (Ciss) (Max) @ Vds :
- 1360pF @ 15V
- Dual Supply Voltage :
- -30V
- Transistor Element Material :
- SILICON
- FET Type :
- 2 P-Channel (Dual)
- Number of Terminations :
- 8
- Nominal Vgs :
- 1.9 V
- Radiation Hardening :
- No
- Element Configuration :
- Dual
- Published :
- 2006
- Max Junction Temperature (Tj) :
- 150°C
- Gate to Source Voltage (Vgs) :
- 25V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Rds On (Max) @ Id, Vgs :
- 22m Ω @ 6.9A, 10V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Length :
- 5mm
- Gate Charge (Qg) (Max) @ Vgs :
- 40nC @ 10V
- Packaging :
- Tape and Reel (TR)
- Turn-Off Delay Time :
- 68 ns
- Mount :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Pbfree Code :
- yes
- Additional Feature :
- ESD Protection
- Mounting Type :
- Surface Mount
- Datasheets
- FDS4935BZ

FDS4935BZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDS4935BZ Description
This P-channel MOSFET is designed to improve the overall efficiency of the DC/DC converter using synchronous or conventional switch PWM controllers and battery chargers. These MOSFET have faster switching speed and lower gate charge than other MOSFET with similar RDS specification. The result is an easy-to-drive and safer MOSFET (even at very high frequencies) and a DC/DC power design with higher overall efficiency.
FDS4935BZ Features
¨C6.9 A, ¨C30 V
RDS(ON) = 22 m|? @ VGS = ¨C10 V
RDS(ON) = 35 m @ VGS = ¨C 4.5 V
Extended VGSS range (¨C25V) for battery applications
ESD protection diode (note 3)
High performance trench technology for extremelylow RDS(ON)
High power and current handling capability
FDS4935BZ Applications
This product is general usage and suitable for many different applications.
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