FDS2672-F085

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

8

Weight :

230.4mg

Radiation Hardening :

No

Terminal Position :

Dual

Transistor Application :

SWITCHING

Power Dissipation-Max :

2.5W Ta

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Mounting Type :

Surface Mount

Terminal Finish :

Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

3.9A Ta

Mount :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Number of Terminations :

8

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Fall Time (Typ) :

10 ns

Drain to Source Breakdown Voltage :

200V

FET Type :

N-Channel

Series :

Automotive, AEC-Q101, UltraFET™

Input Capacitance (Ciss) (Max) @ Vds :

2535pF @ 100V

Feedback Cap-Max (Crss) :

45 pF

Element Configuration :

Single

Drain-source On Resistance-Max :

0.07Ohm

Operating Temperature :

-55°C~150°C TJ

Rise Time :

10ns

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

3.9A

Vgs (Max) :

±20V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

35 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

46nC @ 10V

JESD-609 Code :

e4

Turn On Delay Time :

22 ns

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

70m Ω @ 3.9A, 10V

Power Dissipation :

2.5W

Vgs(th) (Max) @ Id :

4V @ 250µA