FDS2572
- Mfr.Part #
- FDS2572
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 4
- Stock
- 27,263
- In Stock :
- 27,263
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 44 ns
- Turn On Delay Time :
- 14 ns
- Pbfree Code :
- yes
- Number of Pins :
- 8
- Contact Plating :
- Tin
- Rise Time :
- 4ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Terminal Position :
- Dual
- Weight :
- 130mg
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 22 hours ago)
- RoHS Status :
- ROHS3 Compliant
- Series :
- UltraFET™
- Drain to Source Breakdown Voltage :
- 150V
- Fall Time (Typ) :
- 22 ns
- Packaging :
- Tape and Reel (TR)
- Power Dissipation-Max :
- 2.5W Ta
- Mounting Type :
- Surface Mount
- Length :
- 5mm
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Form :
- Gull wing
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 47m Ω @ 4.9A, 10V
- Power Dissipation :
- 2.5W
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 4.9A Tc
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- 260
- Continuous Drain Current (ID) :
- 4.9A
- Vgs (Max) :
- ±20V
- Resistance :
- 47mOhm
- Published :
- 2001
- Time@Peak Reflow Temperature-Max (s) :
- 30
- REACH SVHC :
- No SVHC
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Width :
- 4mm
- Voltage - Rated DC :
- 150V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Height :
- 1.5mm
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- Threshold Voltage :
- 4V
- Number of Terminations :
- 8
- Operating Mode :
- ENHANCEMENT MODE
- Current Rating :
- 4.9A
- Input Capacitance (Ciss) (Max) @ Vds :
- 2050pF @ 25V
- Factory Lead Time :
- 12 Weeks
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Datasheets
- FDS2572

N-Channel Tape & Reel (TR) 47m Ω @ 4.9A, 10V ±20V 2050pF @ 25V 38nC @ 10V 8-SOIC (0.154, 3.90mm Width)
FDS2572 Description
With a voltage of 150V, the FDS2572 is an N-channel Power MOSFET transistor from ON Semiconductor. Ultra FET? devices have a unique set of properties that enable them to achieve industry-leading efficiency in power conversion applications. These devices are ideal for high frequency DC to DC converters because they have low Rds(on), low ESR, low total, and Miller gate charge.
FDS2572 Features
-
RDS(ON) = 0.040Ω (Typ.), VGS = 10V
-
Qg(TOT) = 29nC (Typ.), VGS = 10V
-
Low QRR Body Diode
-
Maximized efficiency at high frequencies
-
UIS Rated
FDS2572 Applications
-
This product is general usage and suitable for many different applications.
-
DC/DC Converters
-
Telecom and Data-Com Distributed Power Architectures
-
48-volt I/P Half-bridge/Full-Bridge
-
24-volt Forward and Push-Pull Topologies
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