FDS2070N7

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Finish :

NICKEL PALLADIUM GOLD

Avalanche Energy Rating (Eas) :

370 mJ

Rds On (Max) @ Id, Vgs :

78m Ω @ 4.1A, 10V

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

150V

Pulsed Drain Current-Max (IDM) :

30A

Peak Reflow Temperature (Cel) :

260

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

4.1A Ta

FET Type :

N-Channel

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

3W Ta

Transistor Application :

SWITCHING

Reach Compliance Code :

Unknown

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Series :

PowerTrench®

Number of Terminations :

8

Mounting Type :

Surface Mount

JESD-30 Code :

R-PDSO-G8

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

4.1A

JESD-609 Code :

e4

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Vgs (Max) :

±20V

Number of Elements :

1

Drain-source On Resistance-Max :

0.078Ohm

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

53nC @ 10V

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

150V

Qualification Status :

COMMERCIAL

Input Capacitance (Ciss) (Max) @ Vds :

1.884pF @ 75V

Packaging :

Tape and Reel (TR)

Pin Count :

8

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual