FDS2572

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Series :

UltraFET™

Rise Time :

4ns

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

47m Ω @ 4.9A, 10V

Lifecycle Status :

ACTIVE (Last Updated: 22 hours ago)

Current - Continuous Drain (Id) @ 25°C :

4.9A Tc

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

2050pF @ 25V

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

30

Number of Pins :

8

Fall Time (Typ) :

22 ns

Width :

4mm

Weight :

130mg

Turn On Delay Time :

14 ns

Contact Plating :

Tin

Transistor Element Material :

SILICON

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Continuous Drain Current (ID) :

4.9A

RoHS Status :

ROHS3 Compliant

Height :

1.5mm

Drain to Source Breakdown Voltage :

150V

JESD-609 Code :

e3

Threshold Voltage :

4V

Published :

2001

Current Rating :

4.9A

Resistance :

47mOhm

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Factory Lead Time :

12 Weeks

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

2.5W Ta

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Length :

5mm

Number of Terminations :

8

Element Configuration :

Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Turn-Off Delay Time :

44 ns

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Lead Free :

Lead Free

Power Dissipation :

2.5W

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Voltage - Rated DC :

150V