FDS2572
- Mfr.Part #
- FDS2572
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 4.9A 8SOIC
- Stock
- 24,978
- In Stock :
- 24,978
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 22 hours ago)
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 130mg
- REACH SVHC :
- No SVHC
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Voltage - Rated DC :
- 150V
- Height :
- 1.5mm
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Continuous Drain Current (ID) :
- 4.9A
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Width :
- 4mm
- Number of Terminations :
- 8
- Power Dissipation :
- 2.5W
- Fall Time (Typ) :
- 22 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Threshold Voltage :
- 4V
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 4.9A Tc
- Turn On Delay Time :
- 14 ns
- Rise Time :
- 4ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Radiation Hardening :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Factory Lead Time :
- 12 Weeks
- ECCN Code :
- EAR99
- Current Rating :
- 4.9A
- Number of Pins :
- 8
- Published :
- 2001
- Drain to Source Breakdown Voltage :
- 150V
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Position :
- Dual
- Power Dissipation-Max :
- 2.5W Ta
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Length :
- 5mm
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- Resistance :
- 47mOhm
- Series :
- UltraFET™
- Rds On (Max) @ Id, Vgs :
- 47m Ω @ 4.9A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2050pF @ 25V
- Turn-Off Delay Time :
- 44 ns
- Datasheets
- FDS2572

N-Channel Tape & Reel (TR) 47m Ω @ 4.9A, 10V ±20V 2050pF @ 25V 38nC @ 10V 8-SOIC (0.154, 3.90mm Width)
FDS2572 Description
With a voltage of 150V, the FDS2572 is an N-channel Power MOSFET transistor from ON Semiconductor. Ultra FET? devices have a unique set of properties that enable them to achieve industry-leading efficiency in power conversion applications. These devices are ideal for high frequency DC to DC converters because they have low Rds(on), low ESR, low total, and Miller gate charge.
FDS2572 Features
-
RDS(ON) = 0.040Ω (Typ.), VGS = 10V
-
Qg(TOT) = 29nC (Typ.), VGS = 10V
-
Low QRR Body Diode
-
Maximized efficiency at high frequencies
-
UIS Rated
FDS2572 Applications
-
This product is general usage and suitable for many different applications.
-
DC/DC Converters
-
Telecom and Data-Com Distributed Power Architectures
-
48-volt I/P Half-bridge/Full-Bridge
-
24-volt Forward and Push-Pull Topologies
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