FDS2070N3

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

3W Ta

Qualification Status :

COMMERCIAL

DS Breakdown Voltage-Min :

150V

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PDSO-G8

Gate Charge (Qg) (Max) @ Vgs :

53nC @ 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e4

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

4.1A

Drain to Source Voltage (Vdss) :

150V

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±20V

Terminal Position :

Dual

Pbfree Code :

yes

Terminal Finish :

NICKEL PALLADIUM GOLD

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

4.1A Ta

Rds On (Max) @ Id, Vgs :

78m Ω @ 4.1A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1.884pF @ 75V

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

8

Pin Count :

8

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Case Connection :

DRAIN

Series :

PowerTrench®

Drain-source On Resistance-Max :

0.078Ohm