FDS2672

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

50A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

2535pF @ 100V

Voltage - Rated DC :

200V

Power Dissipation :

2.5W

Drain to Source Breakdown Voltage :

200V

Turn On Delay Time :

22 ns

Height :

1.5mm

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Weight :

130mg

Lead Free :

Lead Free

Nominal Vgs :

2.9 V

Avalanche Energy Rating (Eas) :

37.5 mJ

ECCN Code :

EAR99

Number of Terminations :

8

Rise Time :

10ns

Dual Supply Voltage :

200V

Series :

UltraFET™

Number of Elements :

1

Termination :

SMD/SMT

Pbfree Code :

yes

Threshold Voltage :

2.9V

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Power Dissipation-Max :

2.5W Ta

REACH SVHC :

No SVHC

Number of Pins :

8

Radiation Hardening :

No

Width :

4mm

Terminal Form :

Gull wing

Contact Plating :

Tin

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e4

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Resistance :

70mOhm

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

3.9A Ta

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

3.9A

Element Configuration :

Single

Length :

5mm

Current Rating :

3.9A

Factory Lead Time :

11 Weeks

Rds On (Max) @ Id, Vgs :

70m Ω @ 3.9A, 10V

Turn-Off Delay Time :

35 ns

Gate Charge (Qg) (Max) @ Vgs :

46nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

10 ns