FDS2170N7

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

200V

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Terminal Finish :

NICKEL PALLADIUM GOLD

Vgs (Max) :

±20V

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

8

JESD-609 Code :

e4

Drain to Source Voltage (Vdss) :

200V

JESD-30 Code :

R-PDSO-G8

Reach Compliance Code :

Unknown

Operating Temperature :

-55°C~150°C TJ

Series :

PowerTrench®

Pin Count :

8

Case Connection :

DRAIN

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Qualification Status :

COMMERCIAL

Drain Current-Max (Abs) (ID) :

3A

Pulsed Drain Current-Max (IDM) :

20A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Surface Mount :

yes

Avalanche Energy Rating (Eas) :

400 mJ

Rds On (Max) @ Id, Vgs :

128m Ω @ 3A, 10V

Power Dissipation-Max :

3W Ta

Drain-source On Resistance-Max :

0.128Ohm

Transistor Element Material :

SILICON

Pbfree Code :

yes

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

1.292pF @ 100V

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

3A Ta