FDS2582

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

PowerTrench®

Pbfree Code :

yes

Number of Terminations :

8

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Element Configuration :

Single

Width :

4mm

Dual Supply Voltage :

150V

Rise Time :

19ns

Fall Time (Typ) :

26 ns

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

4.1A Ta

Length :

5mm

ECCN Code :

EAR99

Turn-Off Delay Time :

36 ns

Turn On Delay Time :

11 ns

Weight :

130mg

Nominal Vgs :

4 V

Resistance :

66mOhm

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Current Rating :

4.1A

REACH SVHC :

No SVHC

Factory Lead Time :

11 Weeks

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

252 mJ

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

1290pF @ 25V

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Vgs(th) (Max) @ Id :

4V @ 250µA

Continuous Drain Current (ID) :

4.1A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Threshold Voltage :

4V

Contact Plating :

Tin

Radiation Hardening :

No

JESD-609 Code :

e4

Termination :

SMD/SMT

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

ACTIVE (Last Updated: 23 hours ago)

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Gull wing

Power Dissipation :

2.5W

Number of Pins :

8

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

150V

Drain to Source Breakdown Voltage :

150V

Rds On (Max) @ Id, Vgs :

66m Ω @ 4.1A, 10V

FET Type :

N-Channel

Transistor Element Material :

SILICON

Power Dissipation-Max :

2.5W Ta

Vgs (Max) :

±20V

Published :

2002

Height :

1.5mm