FDS2670

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

8ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Lead Free :

Lead Free

Current Rating :

3A

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Terminal Finish :

Tin (Sn)

Length :

5mm

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

Gull wing

Number of Pins :

8

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 23 hours ago)

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Operating Temperature :

-55°C~150°C TJ

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Series :

PowerTrench®

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

RoHS Status :

ROHS3 Compliant

Qualification Status :

Not Qualified

Turn On Delay Time :

13 ns

Current - Continuous Drain (Id) @ 25°C :

3A Ta

Number of Terminations :

8

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Power Dissipation :

2.5W

Factory Lead Time :

6 Weeks

Width :

4mm

Voltage - Rated DC :

200V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Element Configuration :

Single

Transistor Application :

SWITCHING

Height :

1.5mm

Input Capacitance (Ciss) (Max) @ Vds :

1228pF @ 100V

Weight :

130mg

Resistance :

130mOhm

Fall Time (Typ) :

25 ns

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

200V

Rds On (Max) @ Id, Vgs :

130m Ω @ 3A, 10V

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

3A

Mount :

Surface Mount

Power Dissipation-Max :

2.5W Ta

Gate to Source Voltage (Vgs) :

20V

Drain Current-Max (Abs) (ID) :

3A

Turn-Off Delay Time :

30 ns