FDS2670
- Mfr.Part #
- FDS2670
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 3A 8SOIC
- Stock
- 5,145
- In Stock :
- 5,145
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 8ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Lead Free :
- Lead Free
- Current Rating :
- 3A
- Terminal Position :
- Dual
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- Terminal Finish :
- Tin (Sn)
- Length :
- 5mm
- Vgs (Max) :
- ±20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Form :
- Gull wing
- Number of Pins :
- 8
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 23 hours ago)
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Series :
- PowerTrench®
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 43nC @ 10V
- RoHS Status :
- ROHS3 Compliant
- Qualification Status :
- Not Qualified
- Turn On Delay Time :
- 13 ns
- Current - Continuous Drain (Id) @ 25°C :
- 3A Ta
- Number of Terminations :
- 8
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 2.5W
- Factory Lead Time :
- 6 Weeks
- Width :
- 4mm
- Voltage - Rated DC :
- 200V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Height :
- 1.5mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 1228pF @ 100V
- Weight :
- 130mg
- Resistance :
- 130mOhm
- Fall Time (Typ) :
- 25 ns
- Pbfree Code :
- yes
- Drain to Source Breakdown Voltage :
- 200V
- Rds On (Max) @ Id, Vgs :
- 130m Ω @ 3A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 3A
- Mount :
- Surface Mount
- Power Dissipation-Max :
- 2.5W Ta
- Gate to Source Voltage (Vgs) :
- 20V
- Drain Current-Max (Abs) (ID) :
- 3A
- Turn-Off Delay Time :
- 30 ns
- Datasheets
- FDS2670

N-Channel Tape & Reel (TR) 130m Ω @ 3A, 10V ±20V 1228pF @ 100V 43nC @ 10V 8-SOIC (0.154, 3.90mm Width)
FDS2670 Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
FDS2670 Features
3.0 A, 200 V. RDS(ON) = 130 m? @ VGS = 10 V
Low gate charge
Fast switching speed
High-performance trench technology for extremely low RDS(ON)
High power and current handling capability
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