FDME1034CZT

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Mfr.Part #
FDME1034CZT
Manufacturer
Fairchild Semiconductor
Package / Case
6-UFDFN Exposed Pad
Datasheet
Download
Description
SMALL SIGNAL FIELD-EFFECT TRANSI
Stock
61,793
In Stock :
61,793

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Arrays
Polarity/Channel Type :
N-CHANNEL AND P-CHANNEL
Operating Temperature :
-55°C~150°C TJ
Input Capacitance (Ciss) (Max) @ Vds :
300pF @ 10V
Series :
PowerTrench®
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Threshold Voltage :
700mV
Number of Terminations :
6
Current - Continuous Drain (Id) @ 25°C :
3.8A 2.6A
Transistor Application :
SWITCHING
Packaging :
Tape and Reel (TR)
FET Feature :
Logic Level Gate
Operating Mode :
ENHANCEMENT MODE
ECCN Code :
EAR99
Power Dissipation :
1.3W
Package / Case :
6-UFDFN Exposed Pad
Radiation Hardening :
No
Turn-Off Delay Time :
33 ns
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
JESD-609 Code :
e4
Length :
1.6mm
Power - Max :
600mW
Height :
500μm
Drain to Source Voltage (Vdss) :
20V
Nominal Vgs :
700 mV
Gate Charge (Qg) (Max) @ Vgs :
4.2nC @ 4.5V
Width :
1.6mm
Feedback Cap-Max (Crss) :
40 pF
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Weight :
25.2mg
Rise Time :
4.8ns
Drain Current-Max (Abs) (ID) :
3.4A
RoHS Status :
ROHS3 Compliant
Transistor Element Material :
SILICON
Case Connection :
DRAIN
Factory Lead Time :
16 Weeks
Rds On (Max) @ Id, Vgs :
66m Ω @ 3.4A, 4.5V
Published :
2017
Additional Feature :
ESD Protection
Terminal Finish :
Nickel/Palladium/Gold (Ni/Pd/Au)
Max Power Dissipation :
1.4W
Mounting Type :
Surface Mount
Mount :
Surface Mount
Pbfree Code :
yes
Drain to Source Breakdown Voltage :
-20V
REACH SVHC :
No SVHC
Number of Pins :
6
Vgs(th) (Max) @ Id :
1V @ 250μA
FET Type :
N and P-Channel
Element Configuration :
Dual
Continuous Drain Current (ID) :
3.8A
Number of Elements :
2
Gate to Source Voltage (Vgs) :
8V
Fall Time (Typ) :
16 ns
Datasheets
FDME1034CZT
Introducing Transistors - FETs, MOSFETs - Arrays Fairchild Semiconductor FDME1034CZT from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:6, Package / Case:6-UFDFN Exposed Pad, Mounting Type:Surface Mount, Number of Pins:6, FDME1034CZT pinout, FDME1034CZT datasheet PDF, FDME1034CZT amp .Beyond Transistors - FETs, MOSFETs - Arrays Fairchild Semiconductor FDME1034CZT ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FDME1034CZT


FDME1034CZT datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at

FDME1034CZT   Description


 The device is a single package solution designed for DC/DC' switch 'MOSFET in cellular phones and other super-portable applications. It has independent N-channel and P-channel MOSFET and low on-state resistance to minimize on-loss. The gate charge of each MOSFET is also minimized to allow high frequency switching directly from the control device. The MicroFET 1.6x1.6 ultra-thin package provides excellent thermal performance with its physical size, making it ideal for switching and linear mode applications.

 


FDME1034CZT   Features 


Q1: N?Channel

? Max rDS(on) = 66 m at VGS = 4.5 V, ID = 3.4 A

? Max rDS(on) = 86 m at VGS = 2.5 V, ID = 2.9 A

? Max rDS(on) = 113 m at VGS = 1.8 V, ID = 2.5 A

? Max rDS(on) = 160 m at VGS = 1.5 V, ID = 2.1 A

Q2: P?Channel

? Max rDS(on) = 142 m at VGS = ?4.5 V, ID = ?2.3 A

? Max rDS(on) = 213 m at VGS = ?2.5 V, ID = ?1.8 A

? Max rDS(on) = 331 m at VGS = ?1.8 V, ID = ?1.5 A

? Max rDS(on) = 530 m at VGS = ?1.5 V, ID = ?1.2 A

? Low Profile: 0.55 mm Maximum in the New Package MicroFET

1.6x1.6 Thin

? Free from Halogenated Compounds and Antimony Oxides

? HBM ESD Protection Level > 1600 V (Note 3)

? This Device is Pb?Free and is RoHS Compliant


FDME1034CZT    Applications


? DC?DC Conversion

? Level Shifted Load Switch

 






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