FDME1034CZT
- Mfr.Part #
- FDME1034CZT
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 6-UFDFN Exposed Pad
- Datasheet
- Download
- Description
- SMALL SIGNAL FIELD-EFFECT TRANSI
- Stock
- 61,793
- In Stock :
- 61,793
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Polarity/Channel Type :
- N-CHANNEL AND P-CHANNEL
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 300pF @ 10V
- Series :
- PowerTrench®
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Threshold Voltage :
- 700mV
- Number of Terminations :
- 6
- Current - Continuous Drain (Id) @ 25°C :
- 3.8A 2.6A
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- FET Feature :
- Logic Level Gate
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Power Dissipation :
- 1.3W
- Package / Case :
- 6-UFDFN Exposed Pad
- Radiation Hardening :
- No
- Turn-Off Delay Time :
- 33 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- JESD-609 Code :
- e4
- Length :
- 1.6mm
- Power - Max :
- 600mW
- Height :
- 500μm
- Drain to Source Voltage (Vdss) :
- 20V
- Nominal Vgs :
- 700 mV
- Gate Charge (Qg) (Max) @ Vgs :
- 4.2nC @ 4.5V
- Width :
- 1.6mm
- Feedback Cap-Max (Crss) :
- 40 pF
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 25.2mg
- Rise Time :
- 4.8ns
- Drain Current-Max (Abs) (ID) :
- 3.4A
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Case Connection :
- DRAIN
- Factory Lead Time :
- 16 Weeks
- Rds On (Max) @ Id, Vgs :
- 66m Ω @ 3.4A, 4.5V
- Published :
- 2017
- Additional Feature :
- ESD Protection
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Max Power Dissipation :
- 1.4W
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Pbfree Code :
- yes
- Drain to Source Breakdown Voltage :
- -20V
- REACH SVHC :
- No SVHC
- Number of Pins :
- 6
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- FET Type :
- N and P-Channel
- Element Configuration :
- Dual
- Continuous Drain Current (ID) :
- 3.8A
- Number of Elements :
- 2
- Gate to Source Voltage (Vgs) :
- 8V
- Fall Time (Typ) :
- 16 ns
- Datasheets
- FDME1034CZT

FDME1034CZT datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDME1034CZT Description
The device is a single package solution designed for DC/DC' switch 'MOSFET in cellular phones and other super-portable applications. It has independent N-channel and P-channel MOSFET and low on-state resistance to minimize on-loss. The gate charge of each MOSFET is also minimized to allow high frequency switching directly from the control device. The MicroFET 1.6x1.6 ultra-thin package provides excellent thermal performance with its physical size, making it ideal for switching and linear mode applications.
FDME1034CZT Features
Q1: N?Channel
? Max rDS(on) = 66 m at VGS = 4.5 V, ID = 3.4 A
? Max rDS(on) = 86 m at VGS = 2.5 V, ID = 2.9 A
? Max rDS(on) = 113 m at VGS = 1.8 V, ID = 2.5 A
? Max rDS(on) = 160 m at VGS = 1.5 V, ID = 2.1 A
Q2: P?Channel
? Max rDS(on) = 142 m at VGS = ?4.5 V, ID = ?2.3 A
? Max rDS(on) = 213 m at VGS = ?2.5 V, ID = ?1.8 A
? Max rDS(on) = 331 m at VGS = ?1.8 V, ID = ?1.5 A
? Max rDS(on) = 530 m at VGS = ?1.5 V, ID = ?1.2 A
? Low Profile: 0.55 mm Maximum in the New Package MicroFET
1.6x1.6 Thin
? Free from Halogenated Compounds and Antimony Oxides
? HBM ESD Protection Level > 1600 V (Note 3)
? This Device is Pb?Free and is RoHS Compliant
FDME1034CZT Applications
? DC?DC Conversion
? Level Shifted Load Switch
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