FDME430NT
- Mfr.Part #
- FDME430NT
- Manufacturer
- onsemi
- Package / Case
- 6-PowerUFDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 6A MICROFET1.6
- Stock
- 5,000
- In Stock :
- 5,000
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 12 Weeks
- HTS Code :
- 8541.29.00.95
- Rds On (Max) @ Id, Vgs :
- 40m Ω @ 6A, 4.5V
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Current - Continuous Drain (Id) @ 25°C :
- 6A Ta
- Drain-source On Resistance-Max :
- 0.04Ohm
- Case Connection :
- DRAIN
- Feedback Cap-Max (Crss) :
- 75 pF
- JESD-30 Code :
- S-PDSO-N3
- Gate Charge (Qg) (Max) @ Vgs :
- 9nC @ 4.5V
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 30V
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Length :
- 1.6mm
- Pbfree Code :
- yes
- Power Dissipation :
- 2.1W
- Continuous Drain Current (ID) :
- 6A
- Number of Pins :
- 6
- Gate to Source Voltage (Vgs) :
- 12V
- Packaging :
- Tape and Reel (TR)
- FET Type :
- N-Channel
- RoHS Status :
- RoHS Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Height :
- 500μm
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 3.3 ns
- Mount :
- Surface Mount
- Turn On Delay Time :
- 7 ns
- Vgs (Max) :
- ±12V
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Power Dissipation-Max :
- 2.1W Ta
- JESD-609 Code :
- e4
- Weight :
- 30mg
- Series :
- PowerTrench®
- Input Capacitance (Ciss) (Max) @ Vds :
- 760pF @ 15V
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~150°C TJ
- Drain Current-Max (Abs) (ID) :
- 6A
- Rise Time :
- 3ns
- ECCN Code :
- EAR99
- Package / Case :
- 6-PowerUFDFN
- Turn-Off Delay Time :
- 19 ns
- Width :
- 1.6mm
- Datasheets
- FDME430NT

N-Channel Tape & Reel (TR) 40m Ω @ 6A, 4.5V ±12V 760pF @ 15V 9nC @ 4.5V 6-PowerUFDFN
FDME430NT Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 760pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 6A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=30V. And this device has 30V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 6A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 19 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 7 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 12V.By using drive voltage (1.8V 4.5V), this device helps reduce its overall power consumption.
FDME430NT Features
a continuous drain current (ID) of 6A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 19 ns
FDME430NT Applications
There are a lot of ON Semiconductor
FDME430NT applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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