FDME410NZT
- Mfr.Part #
- FDME410NZT
- Manufacturer
- onsemi
- Package / Case
- 6-PowerUFDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 7A MICROFET
- Stock
- 34,005
- In Stock :
- 34,005
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 7.3 ns
- Rds On (Max) @ Id, Vgs :
- 26m Ω @ 7A, 4.5V
- Number of Pins :
- 6
- Mounting Type :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.5V 4.5V
- Turn-Off Delay Time :
- 27 ns
- Lead Free :
- Lead Free
- Factory Lead Time :
- 25 Weeks
- JESD-609 Code :
- e4
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Vgs (Max) :
- ±8V
- RoHS Status :
- RoHS Compliant
- Fall Time (Typ) :
- 3.2 ns
- Additional Feature :
- ESD Protection
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Package / Case :
- 6-PowerUFDFN
- Power Dissipation-Max :
- 2.1W Ta
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Continuous Drain Current (ID) :
- 7A
- Number of Terminations :
- 3
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Power Dissipation :
- 1.4W
- Lifecycle Status :
- CONSULT SALES OFFICE (Last Updated: 1 week ago)
- Drain to Source Breakdown Voltage :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1025pF @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 8V
- Nominal Vgs :
- 700 mV
- Height :
- 500μm
- REACH SVHC :
- No SVHC
- JESD-30 Code :
- S-PDSO-N3
- Operating Mode :
- ENHANCEMENT MODE
- Width :
- 1.6mm
- Case Connection :
- DRAIN
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 4.5V
- Current - Continuous Drain (Id) @ 25°C :
- 7A Ta
- Transistor Application :
- SWITCHING
- Terminal Position :
- Dual
- Threshold Voltage :
- 700mV
- Series :
- PowerTrench®
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Drain Current-Max (Abs) (ID) :
- 7A
- Radiation Hardening :
- No
- Weight :
- 30mg
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Rise Time :
- 3.4ns
- Length :
- 1.6mm
- Datasheets
- FDME410NZT

N-Channel Tape & Reel (TR) 26m Ω @ 7A, 4.5V ±8V 1025pF @ 10V 13nC @ 4.5V 6-PowerUFDFN
FDME410NZT Description
The FDME410NZT is a single N-channel MOSFET designed using Fairchild Semiconductor's advanced PowerTrench? process to optimize the RDS (ON) @ VGS = 1.5V on a special MicroFET lead frame. The onsemi FDME410NZT is suitable for Li-ion battery pack, baseband switch, and load switch applications. The operating junction and storage temperature are between -55 and 150℃. The MOSFET FDME410NZT is in the UMLP-6 package with 1.4W power dissipation.
FDME410NZT Features
-
Max rDs(on)= 26 mΩ at VGS=4.5V,ID= 7 A
-
Max rDs(on)=31 mΩ at VGS=2.5V,lD=6A
-
Max rDs(on)= 39 mΩ at VGS= 1.8V,ID=5A
-
Max rDs(on)= 53 mΩ at VGS= 1.5V,lD=4A
-
Low profile: 0.55mm maximum in the new package MicroFET 1 .6x1.6 Thin
-
Free from halogenated compounds and antimony oxides
FDME410NZT Applications
-
Li-lon Battery Pack
-
Baseband Switch
-
Load Switch
-
DC-DC Conversion
-
Power Management
-
Industrial
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