FDME410NZT

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Mfr.Part #
FDME410NZT
Manufacturer
onsemi
Package / Case
6-PowerUFDFN
Datasheet
Download
Description
MOSFET N-CH 20V 7A MICROFET
Stock
34,005
In Stock :
34,005

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Turn On Delay Time :
7.3 ns
Rds On (Max) @ Id, Vgs :
26m Ω @ 7A, 4.5V
Number of Pins :
6
Mounting Type :
Surface Mount
Drive Voltage (Max Rds On,Min Rds On) :
1.5V 4.5V
Turn-Off Delay Time :
27 ns
Lead Free :
Lead Free
Factory Lead Time :
25 Weeks
JESD-609 Code :
e4
Pbfree Code :
yes
Operating Temperature :
-55°C~150°C TJ
Vgs (Max) :
±8V
RoHS Status :
RoHS Compliant
Fall Time (Typ) :
3.2 ns
Additional Feature :
ESD Protection
Number of Elements :
1
Transistor Element Material :
SILICON
Package / Case :
6-PowerUFDFN
Power Dissipation-Max :
2.1W Ta
Element Configuration :
Single
Packaging :
Tape and Reel (TR)
Continuous Drain Current (ID) :
7A
Number of Terminations :
3
Terminal Finish :
Nickel/Palladium/Gold (Ni/Pd/Au)
Power Dissipation :
1.4W
Lifecycle Status :
CONSULT SALES OFFICE (Last Updated: 1 week ago)
Drain to Source Breakdown Voltage :
20V
Input Capacitance (Ciss) (Max) @ Vds :
1025pF @ 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate to Source Voltage (Vgs) :
8V
Nominal Vgs :
700 mV
Height :
500μm
REACH SVHC :
No SVHC
JESD-30 Code :
S-PDSO-N3
Operating Mode :
ENHANCEMENT MODE
Width :
1.6mm
Case Connection :
DRAIN
Gate Charge (Qg) (Max) @ Vgs :
13nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C :
7A Ta
Transistor Application :
SWITCHING
Terminal Position :
Dual
Threshold Voltage :
700mV
Series :
PowerTrench®
ECCN Code :
EAR99
Mount :
Surface Mount
Drain Current-Max (Abs) (ID) :
7A
Radiation Hardening :
No
Weight :
30mg
FET Type :
N-Channel
Vgs(th) (Max) @ Id :
1V @ 250μA
Rise Time :
3.4ns
Length :
1.6mm
Datasheets
FDME410NZT
Introducing Transistors - FETs, MOSFETs - Single onsemi FDME410NZT from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:6, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:6-PowerUFDFN, Number of Terminations:3, FDME410NZT pinout, FDME410NZT datasheet PDF, FDME410NZT amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDME410NZT ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDME410NZT


N-Channel Tape & Reel (TR) 26m Ω @ 7A, 4.5V ±8V 1025pF @ 10V 13nC @ 4.5V 6-PowerUFDFN

FDME410NZT Description


The FDME410NZT is a single N-channel MOSFET designed using Fairchild Semiconductor's advanced PowerTrench? process to optimize the RDS (ON) @ VGS = 1.5V on a special MicroFET lead frame. The onsemi FDME410NZT is suitable for Li-ion battery pack, baseband switch, and load switch applications. The operating junction and storage temperature are between -55 and 150℃.  The MOSFET FDME410NZT is in the UMLP-6 package with 1.4W power dissipation.



FDME410NZT Features


  • Max rDs(on)= 26 mΩ at VGS=4.5V,ID= 7 A

  • Max rDs(on)=31 mΩ at VGS=2.5V,lD=6A

  • Max rDs(on)= 39 mΩ at VGS= 1.8V,ID=5A

  • Max rDs(on)= 53 mΩ at VGS= 1.5V,lD=4A

  • Low profile: 0.55mm maximum in the new package MicroFET 1 .6x1.6 Thin

  • Free from halogenated compounds and antimony oxides



FDME410NZT Applications


  • Li-lon Battery Pack

  • Baseband Switch

  • Load Switch

  • DC-DC Conversion

  • Power Management

  • Industrial


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