FDME510PZT

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Mfr.Part #
FDME510PZT
Manufacturer
onsemi
Package / Case
6-PowerUFDFN
Datasheet
Download
Description
MOSFET P-CH 20V 6A MICROFET
Stock
43,149
In Stock :
43,149

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Radiation Hardening :
No
Terminal Finish :
Nickel/Palladium/Gold (Ni/Pd/Au)
Continuous Drain Current (ID) :
6A
Rise Time :
10ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drive Voltage (Max Rds On,Min Rds On) :
1.5V 4.5V
Length :
1.6mm
Operating Mode :
ENHANCEMENT MODE
Gate Charge (Qg) (Max) @ Vgs :
22nC @ 4.5V
Mounting Type :
Surface Mount
JESD-30 Code :
S-PDSO-N3
Vgs (Max) :
±8V
Transistor Element Material :
SILICON
Package / Case :
6-PowerUFDFN
Fall Time (Typ) :
54 ns
Power Dissipation :
1.4W
Width :
1.6mm
Number of Terminations :
3
Rds On (Max) @ Id, Vgs :
37m Ω @ 6A, 4.5V
Vgs(th) (Max) @ Id :
1V @ 250μA
Terminal Position :
Dual
Series :
PowerTrench®
Mount :
Surface Mount
Drain to Source Voltage (Vdss) :
20V
RoHS Status :
ROHS3 Compliant
Drain-source On Resistance-Max :
0.037Ohm
Threshold Voltage :
-500mV
Weight :
30mg
Number of Pins :
6
Gate to Source Voltage (Vgs) :
8V
Drain Current-Max (Abs) (ID) :
6A
Element Configuration :
Single
Case Connection :
DRAIN
REACH SVHC :
No SVHC
Transistor Application :
SWITCHING
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Drain to Source Breakdown Voltage :
-20V
Factory Lead Time :
16 Weeks
Input Capacitance (Ciss) (Max) @ Vds :
1490pF @ 10V
Current - Continuous Drain (Id) @ 25°C :
6A Ta
Nominal Vgs :
-500 mV
FET Type :
P-Channel
ECCN Code :
EAR99
Turn On Delay Time :
6.5 ns
Pbfree Code :
yes
Number of Elements :
1
Packaging :
Tape and Reel (TR)
Power Dissipation-Max :
2.1W Ta
Operating Temperature :
-55°C~150°C TJ
Additional Feature :
ESD Protection
Turn-Off Delay Time :
93 ns
JESD-609 Code :
e4
Height :
500μm
Datasheets
FDME510PZT
Introducing Transistors - FETs, MOSFETs - Single onsemi FDME510PZT from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:6-PowerUFDFN, Number of Terminations:3, Number of Pins:6, Operating Temperature:-55°C~150°C TJ, FDME510PZT pinout, FDME510PZT datasheet PDF, FDME510PZT amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDME510PZT ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDME510PZT


P-Channel Tape & Reel (TR) 37m Ω @ 6A, 4.5V ±8V 1490pF @ 10V 22nC @ 4.5V 20V 6-PowerUFDFN

FDME510PZT Description


FDME510PZT is a P-Channel PowerTrench? MOSFET from the manufacturer ON Semiconductor with a voltage of -20V. FDME510PZT is designed specifically for battery charging or load switching in cellular handsets and other ultra-portable applications. It features a MOSFET with low on-state resistance. The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.



FDME510PZT Features


  • Max rDS(on) = 37 mΩat VGS = -4.5 V, ID = -5 A

  • Max rDS(on) = 50 mΩ at VGS = -2.5 V, ID = -4 A

  • Max rDS(on)= 65 mΩ at VGS = -1.8 V, ID = -3 A

  • Max rDS(on) = 100 mΩ at VGS = -1.5 V, ID = -2 A

  • Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin

  • Free from halogenated compounds and antimony oxides

  • HBM ESD protection level > 1600V (Note 3)

  • RoHS Compliant



FDME510PZT Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial





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