FDME910PZT

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Mfr.Part #
FDME910PZT
Manufacturer
Fairchild Semiconductor
Package / Case
6-PowerUFDFN
Datasheet
Download
Description
SMALL SIGNAL FIELD-EFFECT TRANSI
Stock
5,766
In Stock :
5,766

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Power Dissipation-Max :
2.1W Ta
Number of Elements :
1
Transistor Element Material :
SILICON
Element Configuration :
Single
Current - Continuous Drain (Id) @ 25°C :
8A Ta
Factory Lead Time :
16 Weeks
Drive Voltage (Max Rds On,Min Rds On) :
1.8V 4.5V
Pbfree Code :
yes
Rise Time :
11ns
Operating Mode :
ENHANCEMENT MODE
RoHS Status :
ROHS3 Compliant
Mount :
Surface Mount
Continuous Drain Current (ID) :
8A
Gate Charge (Qg) (Max) @ Vgs :
21nC @ 4.5V
Rds On (Max) @ Id, Vgs :
24m Ω @ 8A, 4.5V
Lead Free :
Lead Free
Input Capacitance (Ciss) (Max) @ Vds :
2110pF @ 10V
Drain Current-Max (Abs) (ID) :
8A
Series :
PowerTrench®
Number of Terminations :
3
Length :
1.6mm
JESD-30 Code :
S-PDSO-N3
Turn On Delay Time :
9 ns
Published :
2017
Transistor Application :
SWITCHING
Terminal Finish :
Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal Position :
Dual
Width :
1.6mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tape and Reel (TR)
JESD-609 Code :
e4
Height :
500μm
Power Dissipation :
2.1W
Feedback Cap-Max (Crss) :
330 pF
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Radiation Hardening :
No
Number of Pins :
6
Drain to Source Voltage (Vdss) :
20V
FET Type :
P-Channel
Mounting Type :
Surface Mount
Operating Temperature :
-55°C~150°C TJ
Gate to Source Voltage (Vgs) :
8V
Drain-source On Resistance-Max :
0.024Ohm
Drain to Source Breakdown Voltage :
-20V
Vgs (Max) :
±8V
Turn-Off Delay Time :
87 ns
ECCN Code :
EAR99
Weight :
30mg
Fall Time (Typ) :
46 ns
Case Connection :
DRAIN
Package / Case :
6-PowerUFDFN
Datasheets
FDME910PZT
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDME910PZT from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Pins:6, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:6-PowerUFDFN, FDME910PZT pinout, FDME910PZT datasheet PDF, FDME910PZT amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDME910PZT ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FDME910PZT


P-Channel Tape & Reel (TR) 24m Ω @ 8A, 4.5V ±8V 2110pF @ 10V 21nC @ 4.5V 20V 6-PowerUFDFN

FDME910PZT Description


FDME910PZT is a -20v P-Channel PowerTrench? MOSFET. The onsemi FDME910PZT is designed specifically for battery charging or load switching in cellular handsets and other ultraportable applications. It features a MOSFET with low on-state resistance and Zener diode protection against ESD. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor FDME910PZT is in the UMLP-6 package with 2.1W power dissipation.



FDME910PZT Features


  • Max rDS(on) = 24 mΩ at VGS = -4.5 V, ID = -8 A

  • Max rDS(on) = 31 mΩ at VGS = -2.5 V, ID = -7 A

  • Max rDS(on) = 45 mΩ at VGS = -1.8 V, ID = -6 A

  • Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin

  • HBM ESD protection level > 2 kV typical (Note 3)

  • Free from halogenated compounds and antimony oxides

  • RoHS Compliant



FDME910PZT Applications


  • Mobile phones

  • Tablets

  • Laptops

  • Battery charging

  • Load switching in the cellular handset


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