FDME910PZT
- Mfr.Part #
- FDME910PZT
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 6-PowerUFDFN
- Datasheet
- Download
- Description
- SMALL SIGNAL FIELD-EFFECT TRANSI
- Stock
- 5,766
- In Stock :
- 5,766
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Power Dissipation-Max :
- 2.1W Ta
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 8A Ta
- Factory Lead Time :
- 16 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Pbfree Code :
- yes
- Rise Time :
- 11ns
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Continuous Drain Current (ID) :
- 8A
- Gate Charge (Qg) (Max) @ Vgs :
- 21nC @ 4.5V
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 8A, 4.5V
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 2110pF @ 10V
- Drain Current-Max (Abs) (ID) :
- 8A
- Series :
- PowerTrench®
- Number of Terminations :
- 3
- Length :
- 1.6mm
- JESD-30 Code :
- S-PDSO-N3
- Turn On Delay Time :
- 9 ns
- Published :
- 2017
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Terminal Position :
- Dual
- Width :
- 1.6mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e4
- Height :
- 500μm
- Power Dissipation :
- 2.1W
- Feedback Cap-Max (Crss) :
- 330 pF
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Radiation Hardening :
- No
- Number of Pins :
- 6
- Drain to Source Voltage (Vdss) :
- 20V
- FET Type :
- P-Channel
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Gate to Source Voltage (Vgs) :
- 8V
- Drain-source On Resistance-Max :
- 0.024Ohm
- Drain to Source Breakdown Voltage :
- -20V
- Vgs (Max) :
- ±8V
- Turn-Off Delay Time :
- 87 ns
- ECCN Code :
- EAR99
- Weight :
- 30mg
- Fall Time (Typ) :
- 46 ns
- Case Connection :
- DRAIN
- Package / Case :
- 6-PowerUFDFN
- Datasheets
- FDME910PZT

P-Channel Tape & Reel (TR) 24m Ω @ 8A, 4.5V ±8V 2110pF @ 10V 21nC @ 4.5V 20V 6-PowerUFDFN
FDME910PZT Description
FDME910PZT is a -20v P-Channel PowerTrench? MOSFET. The onsemi FDME910PZT is designed specifically for battery charging or load switching in cellular handsets and other ultraportable applications. It features a MOSFET with low on-state resistance and Zener diode protection against ESD. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor FDME910PZT is in the UMLP-6 package with 2.1W power dissipation.
FDME910PZT Features
-
Max rDS(on) = 24 mΩ at VGS = -4.5 V, ID = -8 A
-
Max rDS(on) = 31 mΩ at VGS = -2.5 V, ID = -7 A
-
Max rDS(on) = 45 mΩ at VGS = -1.8 V, ID = -6 A
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Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin
-
HBM ESD protection level > 2 kV typical (Note 3)
-
Free from halogenated compounds and antimony oxides
-
RoHS Compliant
FDME910PZT Applications
-
Mobile phones
-
Tablets
-
Laptops
-
Battery charging
-
Load switching in the cellular handset
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