FDME820NZT

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

865pF @ 10V

Current - Continuous Drain (Id) @ 25°C :

9A Ta

Power Dissipation :

2.1W

Terminal Position :

Dual

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

18m Ω @ 9A, 4.5V

Fall Time (Typ) :

5 ns

Weight :

30mg

Element Configuration :

Single

Rise Time :

5ns

Drain to Source Breakdown Voltage :

20V

Width :

1.6mm

Series :

PowerTrench®

Vgs(th) (Max) @ Id :

1V @ 250μA

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Drain Current-Max (Abs) (ID) :

9A

Gate to Source Voltage (Vgs) :

12V

Mount :

Surface Mount

Length :

1.6mm

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Lead Free :

Lead Free

FET Type :

N-Channel

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Number of Terminations :

3

Continuous Drain Current (ID) :

9A

Power Dissipation-Max :

2.1W Ta

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

8.5nC @ 4.5V

JESD-30 Code :

S-PDSO-N3

Mounting Type :

Surface Mount

Vgs (Max) :

±12V

Turn On Delay Time :

9 ns

Turn-Off Delay Time :

19 ns

Pbfree Code :

yes

Height :

500μm

Radiation Hardening :

No

Number of Pins :

6

Package / Case :

6-PowerUFDFN

Factory Lead Time :

16 Weeks

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e4