FDME1023PZT
- Mfr.Part #
- FDME1023PZT
- Manufacturer
- onsemi
- Package / Case
- 6-UFDFN Exposed Pad
- Datasheet
- Download
- Description
- MOSFET 2P-CH 20V 2.6A 6MICROFET
- Stock
- 8,483
- In Stock :
- 8,483
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 2009
- Rds On (Max) @ Id, Vgs :
- 142m Ω @ 2.3A, 4.5V
- Rise Time :
- 4.8ns
- Continuous Drain Current (ID) :
- 2.6A
- Series :
- PowerTrench®
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Element Configuration :
- Dual
- Length :
- 1.6mm
- Power - Max :
- 600mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Width :
- 1.6mm
- Number of Elements :
- 2
- Gate Charge (Qg) (Max) @ Vgs :
- 7.7nC @ 4.5V
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Number of Pins :
- 6
- JESD-609 Code :
- e4
- Package / Case :
- 6-UFDFN Exposed Pad
- Number of Terminations :
- 6
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Case Connection :
- DRAIN
- Turn On Delay Time :
- 4.7 ns
- Transistor Application :
- SWITCHING
- Height :
- 500μm
- Fall Time (Typ) :
- 16 ns
- Feedback Cap-Max (Crss) :
- 75 pF
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Gate to Source Voltage (Vgs) :
- 8V
- Drain to Source Voltage (Vdss) :
- 20V
- Factory Lead Time :
- 16 Weeks
- Additional Feature :
- ESD Protection
- Nominal Vgs :
- -600 mV
- Mounting Type :
- Surface Mount
- Drain to Source Breakdown Voltage :
- -20V
- Radiation Hardening :
- No
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Input Capacitance (Ciss) (Max) @ Vds :
- 405pF @ 10V
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -55°C~150°C TJ
- FET Feature :
- Logic Level Gate
- Max Power Dissipation :
- 1.4W
- FET Type :
- 2 P-Channel (Dual)
- Weight :
- 25.2mg
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 33 ns
- Power Dissipation :
- 1.3W
- Threshold Voltage :
- -600mV
- Mount :
- Surface Mount
- Datasheets
- FDME1023PZT

FDME1023PZT datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDME1023PZT Description
The device is a single package solution specifically designed for battery charging switches in cellular phones and other ultra-portable applications. It has two independent P-channel MOSFET with low on-resistance and minimum on-loss. When connected in a typical public power configuration, two-way current flow can be achieved. The MicroFET 1.6x1.6 ultra-thin package provides excellent thermal performance with its physical size, making it ideal for switching and linear mode applications.
FDME1023PZT Features
Max rDS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3 A
Max rDS(on) = 213 mΩ at VGS = -2.5 V, ID = -1.8 A
Max rDS(on)= 331 mΩ at VGS = -1.8 V, ID = -1.5 A
Max rDS(on) = 530 mΩ at VGS = -1.5 V, ID = -1.2 A
Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin
Free from halogenated compounds and antimony oxides
HBM ESD protection level > 1600V (Note3)
RoHS Compliant
FDME1023PZT Applications
This product is general usage and suitable for many different applications.
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