FDME1023PZT

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Mfr.Part #
FDME1023PZT
Manufacturer
onsemi
Package / Case
6-UFDFN Exposed Pad
Datasheet
Download
Description
MOSFET 2P-CH 20V 2.6A 6MICROFET
Stock
8,483
In Stock :
8,483

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Arrays
Operating Mode :
ENHANCEMENT MODE
Published :
2009
Rds On (Max) @ Id, Vgs :
142m Ω @ 2.3A, 4.5V
Rise Time :
4.8ns
Continuous Drain Current (ID) :
2.6A
Series :
PowerTrench®
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Element Configuration :
Dual
Length :
1.6mm
Power - Max :
600mW
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs(th) (Max) @ Id :
1V @ 250μA
Width :
1.6mm
Number of Elements :
2
Gate Charge (Qg) (Max) @ Vgs :
7.7nC @ 4.5V
Terminal Finish :
Nickel/Palladium/Gold (Ni/Pd/Au)
Number of Pins :
6
JESD-609 Code :
e4
Package / Case :
6-UFDFN Exposed Pad
Number of Terminations :
6
ECCN Code :
EAR99
Transistor Element Material :
SILICON
Case Connection :
DRAIN
Turn On Delay Time :
4.7 ns
Transistor Application :
SWITCHING
Height :
500μm
Fall Time (Typ) :
16 ns
Feedback Cap-Max (Crss) :
75 pF
Pbfree Code :
yes
Packaging :
Tape and Reel (TR)
Gate to Source Voltage (Vgs) :
8V
Drain to Source Voltage (Vdss) :
20V
Factory Lead Time :
16 Weeks
Additional Feature :
ESD Protection
Nominal Vgs :
-600 mV
Mounting Type :
Surface Mount
Drain to Source Breakdown Voltage :
-20V
Radiation Hardening :
No
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Input Capacitance (Ciss) (Max) @ Vds :
405pF @ 10V
REACH SVHC :
No SVHC
Operating Temperature :
-55°C~150°C TJ
FET Feature :
Logic Level Gate
Max Power Dissipation :
1.4W
FET Type :
2 P-Channel (Dual)
Weight :
25.2mg
RoHS Status :
ROHS3 Compliant
Turn-Off Delay Time :
33 ns
Power Dissipation :
1.3W
Threshold Voltage :
-600mV
Mount :
Surface Mount
Datasheets
FDME1023PZT
Introducing Transistors - FETs, MOSFETs - Arrays onsemi FDME1023PZT from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:6, Package / Case:6-UFDFN Exposed Pad, Number of Terminations:6, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, FDME1023PZT pinout, FDME1023PZT datasheet PDF, FDME1023PZT amp .Beyond Transistors - FETs, MOSFETs - Arrays onsemi FDME1023PZT ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDME1023PZT


FDME1023PZT datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at

FDME1023PZT      Description

 

The device is a single package solution specifically designed for battery charging switches in cellular phones and other ultra-portable applications. It has two independent P-channel MOSFET with low on-resistance and minimum on-loss. When connected in a typical public power configuration, two-way current flow can be achieved. The MicroFET 1.6x1.6 ultra-thin package provides excellent thermal performance with its physical size, making it ideal for switching and linear mode applications.


FDME1023PZT      Features

 

Max rDS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3 A

Max rDS(on) = 213 mΩ at VGS = -2.5 V, ID = -1.8 A

Max rDS(on)= 331 mΩ at VGS = -1.8 V, ID = -1.5 A

Max rDS(on) = 530 mΩ at VGS = -1.5 V, ID = -1.2 A

Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin

Free from halogenated compounds and antimony oxides

HBM ESD protection level > 1600V (Note3)

RoHS Compliant


FDME1023PZT        Applications


This product is general usage and suitable for many different applications.

 

  





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