FDMA1025P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

700mW

Mounting Type :

Surface Mount

Turn-Off Delay Time :

13 ns

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

-20V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

1.4W

Rds On (Max) @ Id, Vgs :

155m Ω @ 3.1A, 4.5V

FET Type :

2 P-Channel (Dual)

JESD-609 Code :

e4

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 10V

Vgs(th) (Max) @ Id :

1.5V @ 250µA

RoHS Status :

ROHS3 Compliant

Width :

2mm

Number of Pins :

6

Length :

2mm

Number of Elements :

2

Fall Time (Typ) :

14 ns

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Height :

750μm

Weight :

40mg

Threshold Voltage :

-900mV

Series :

PowerTrench®

Current - Continuous Drain (Id) @ 25°C :

3.1A

Continuous Drain Current (ID) :

-3.1A

Gate to Source Voltage (Vgs) :

12V

Package / Case :

6-VDFN Exposed Pad

Mount :

Surface Mount

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Rise Time :

14ns

Lead Free :

Lead Free

Terminal Form :

NO LEAD

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

4.8nC @ 4.5V

Transistor Element Material :

SILICON

Turn On Delay Time :

5 ns

Qualification Status :

Not Qualified

Number of Terminations :

6

Voltage - Rated DC :

-20V

Pulsed Drain Current-Max (IDM) :

6A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Dual

FET Feature :

Logic Level Gate

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Voltage (Vdss) :

20V

Current Rating :

-3.1A

Factory Lead Time :

16 Weeks