FDMA1024NZ
- Mfr.Part #
- FDMA1024NZ
- Manufacturer
- onsemi
- Package / Case
- 6-VDFN Exposed Pad
- Datasheet
- Download
- Description
- MOSFET 2N-CH 20V 5A 6MICROFET
- Stock
- 42,115
- In Stock :
- 42,115
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Mount :
- Surface Mount
- Power Dissipation :
- 1.4W
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- JESD-609 Code :
- e4
- REACH SVHC :
- No SVHC
- Height :
- 750μm
- Fall Time (Typ) :
- 2.2 ns
- Width :
- 2mm
- Terminal Form :
- NO LEAD
- Case Connection :
- DRAIN
- Rds On (Max) @ Id, Vgs :
- 54m Ω @ 5A, 4.5V
- Package / Case :
- 6-VDFN Exposed Pad
- Length :
- 2mm
- Factory Lead Time :
- 16 Weeks
- Gate to Source Voltage (Vgs) :
- 8V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Voltage (Vdss) :
- 20V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Transistor Element Material :
- SILICON
- Turn On Delay Time :
- 5.3 ns
- Nominal Vgs :
- 700 mV
- Mounting Type :
- Surface Mount
- Number of Elements :
- 2
- Series :
- PowerTrench®
- Max Power Dissipation :
- 700mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- FET Type :
- 2 N-Channel (Dual)
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 5A
- Contact Plating :
- Gold
- Element Configuration :
- Dual
- Turn-Off Delay Time :
- 18 ns
- Rise Time :
- 2.2ns
- Weight :
- 40mg
- Input Capacitance (Ciss) (Max) @ Vds :
- 500pF @ 10V
- ECCN Code :
- EAR99
- Published :
- 2007
- Qualification Status :
- Not Qualified
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Threshold Voltage :
- 700mV
- Gate Charge (Qg) (Max) @ Vgs :
- 7.3nC @ 4.5V
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Resistance :
- 54mOhm
- Number of Terminations :
- 6
- Number of Pins :
- 6
- FET Feature :
- Logic Level Gate
- Drain to Source Breakdown Voltage :
- 20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Drain Current-Max (Abs) (ID) :
- 5A
- Datasheets
- FDMA1024NZ

FDMA1024NZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDMA1024NZ Description
The device is a single package solution specially designed to meet the dual switching requirements of cellular phones and other ultra-portable applications. It has two independent N-channel MOSFET with low on-resistance and minimum on-loss. The MicroFET 2X2 package provides excellent thermal performance for its physical size and is ideal for linear mode applications.
FDMA1024NZ Features
Max rDS(on) = 54 m|? at VGS = 4.5 V, ID = 5.0 A
Max rDS(on) = 66 m|? at VGS = 2.5 V, ID = 4.2 A
Max rDS(on) = 82 m|? at VGS= 1.8 V, ID = 2.3 A
Max rDS(on) = 114 m|? at VGS = 1.5 V, ID = 2.0 A
HBM ESD protection level = 1.6 kV (Note 3)
Low profile - 0.8 mm maximum - in the new packageMicroFET 2x2 mm
RoHS Compliant
Free from halogenated compounds and antimonyoxides
FDMA1024NZ Applications
This product is general usage and suitable for many different applications.
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