FDMA1027P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

ECCN Code :

EAR99

Weight :

40mg

Element Configuration :

Dual

Case Connection :

DRAIN

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Length :

2mm

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 4.5V

Vgs(th) (Max) @ Id :

1.3V @ 250µA

Rds On (Max) @ Id, Vgs :

120m Ω @ 3A, 4.5V

Number of Pins :

6

Drain to Source Breakdown Voltage :

-20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

8V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Turn-Off Delay Time :

15 ns

Operating Mode :

ENHANCEMENT MODE

Width :

2mm

JESD-609 Code :

e4

RoHS Status :

ROHS3 Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

Logic Level Gate

Transistor Application :

SWITCHING

FET Type :

2 P-Channel (Dual)

Factory Lead Time :

16 Weeks

Series :

PowerTrench®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Number of Terminations :

6

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Power Dissipation :

1.4W

Terminal Form :

NO LEAD

Max Power Dissipation :

800mW

Height :

750μm

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

3A

Fall Time (Typ) :

11 ns

Turn On Delay Time :

9 ns

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

435pF @ 10V

Mount :

Surface Mount

Package / Case :

6-VDFN Exposed Pad

Rise Time :

11ns

Continuous Drain Current (ID) :

2.2A

Drain to Source Voltage (Vdss) :

20V