FDC8602

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Packaging :

Cut Tape (CT)

Rds On (Max) @ Id, Vgs :

350m Ω @ 1.2A, 10V

Power Dissipation :

690mW

Rise Time :

1.7ns

Number of Terminations :

6

Additional Feature :

ULTRA-LOW RESISTANCE

ECCN Code :

EAR99

JESD-609 Code :

e3

FET Type :

2 N-Channel (Dual)

Vgs(th) (Max) @ Id :

4V @ 250µA

Threshold Voltage :

3.2V

Transistor Element Material :

SILICON

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

100V

Factory Lead Time :

35 Weeks

Gate Charge (Qg) (Max) @ Vgs :

2nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

1.2A

Element Configuration :

Dual

Turn-Off Delay Time :

5.4 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

3.5 ns

FET Feature :

Standard

Feedback Cap-Max (Crss) :

5 pF

Mounting Type :

Surface Mount

Pbfree Code :

yes

JEDEC-95 Code :

MO-193AA

Fall Time (Typ) :

2.3 ns

Drain-source On Resistance-Max :

0.35Ohm

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Series :

PowerTrench®

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Voltage (Vdss) :

100V

Max Junction Temperature (Tj) :

150°C

Mount :

Surface Mount

Transistor Application :

SWITCHING

Number of Pins :

6

Terminal Form :

Gull wing

Number of Elements :

2

Weight :

36mg

Terminal Finish :

Tin (Sn)

Length :

3mm

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Height :

1.1mm

Lead Free :

Lead Free

Width :

1.7mm

Input Capacitance (Ciss) (Max) @ Vds :

70pF @ 50V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Max Power Dissipation :

690mW