FDC8886

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

JEDEC-95 Code :

MO-193AA

Width :

1.7mm

Weight :

36mg

Drain Current-Max (Abs) (ID) :

8A

Number of Pins :

6

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

7.4nC @ 10V

Vgs(th) (Max) @ Id :

3V @ 250µA

ECCN Code :

EAR99

Fall Time (Typ) :

1 ns

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

5 ns

Element Configuration :

Single

Terminal Finish :

Tin (Sn)

Terminal Position :

Dual

Number of Elements :

1

Terminal Form :

Gull wing

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Drain-source On Resistance-Max :

0.023Ohm

Series :

PowerTrench®

Length :

3mm

Power Dissipation-Max :

1.6W Ta

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

1.6W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

6

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

465pF @ 15V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Factory Lead Time :

13 Weeks

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Continuous Drain Current (ID) :

6.5A

Current - Continuous Drain (Id) @ 25°C :

6.5A Ta 8A Tc

JESD-609 Code :

e3

Rise Time :

1ns

Gate to Source Voltage (Vgs) :

20V

Height :

1mm

Feedback Cap-Max (Crss) :

25 pF

Transistor Element Material :

SILICON

Turn-Off Delay Time :

11 ns

Drain to Source Breakdown Voltage :

30V

Operating Mode :

ENHANCEMENT MODE

Published :

2011

Rds On (Max) @ Id, Vgs :

23m Ω @ 6.5A, 10V

FET Type :

N-Channel

HTS Code :

8541.29.00.95