FDC8884
- Mfr.Part #
- FDC8884
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 6.5/8A SUPERSOT6
- Stock
- 170,760
- In Stock :
- 170,760
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 11 ns
- Terminal Finish :
- Tin (Sn)
- Continuous Drain Current (ID) :
- 6.5A
- Power Dissipation :
- 800mW
- Drain Current-Max (Abs) (ID) :
- 8A
- Weight :
- 36mg
- Height :
- 1mm
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- HTS Code :
- 8541.29.00.95
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Length :
- 3mm
- Published :
- 2011
- Fall Time (Typ) :
- 1 ns
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 6.5A Ta 8A Tc
- Drain-source On Resistance-Max :
- 0.023Ohm
- Pbfree Code :
- yes
- Rds On (Max) @ Id, Vgs :
- 23m Ω @ 6.5A, 10V
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Terminal Position :
- Dual
- Series :
- PowerTrench®
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 6
- Terminal Form :
- Gull wing
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds :
- 465pF @ 15V
- Operating Temperature :
- -55°C~150°C TJ
- Gate to Source Voltage (Vgs) :
- 20V
- Factory Lead Time :
- 13 Weeks
- Drain to Source Breakdown Voltage :
- 30V
- Rise Time :
- 1ns
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 7.4nC @ 10V
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 1.6W Ta
- FET Type :
- N-Channel
- Feedback Cap-Max (Crss) :
- 25 pF
- Width :
- 1.7mm
- Number of Pins :
- 6
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JEDEC-95 Code :
- MO-193AA
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Turn On Delay Time :
- 5 ns
- Datasheets
- FDC8884

N-Channel Tape & Reel (TR) 23m Ω @ 6.5A, 10V ±20V 465pF @ 15V 7.4nC @ 10V SOT-23-6 Thin, TSOT-23-6
FDC8884 Description
FDC8884 MOSFET is based on established silicon processes that provide designers with an extensive range of devices. FDC8884 datasheet available in a range of through-hole and surface-mount packaging with standard footprints to facilitate designing. ON Semiconductor FDC8884 is used in power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
FDC8884 Features
RoHS Compliant
Fast switching speed
Max rDS(on) = 30 m|? at VGS = 4.5 V, ID = 6.0 A
High performance trench technology
Max rDS(on) = 23 m|? at VGS = 10 V, ID = 6.5 A
FDC8884 Applications
Power factor correction
Electronic lamp ballasts
Flat panel display
TV power
ATX
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