FDC8878

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Mfr.Part #
FDC8878
Manufacturer
onsemi
Package / Case
SOT-23-6 Thin, TSOT-23-6
Datasheet
Download
Description
MOSFET N-CH 30V 8A/8A SUPERSOT6
Stock
2,810
In Stock :
2,810

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Contact Plating :
Tin
Radiation Hardening :
No
ECCN Code :
EAR99
Height :
1mm
Package / Case :
SOT-23-6 Thin, TSOT-23-6
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Type :
N-Channel
Drain Current-Max (Abs) (ID) :
8A
Element Configuration :
Single
Mount :
Surface Mount
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Number of Elements :
1
RoHS Status :
ROHS3 Compliant
Number of Pins :
6
Turn-Off Delay Time :
17 ns
Published :
2011
Power Dissipation-Max :
1.6W Ta
Gate Charge (Qg) (Max) @ Vgs :
18nC @ 10V
Mounting Type :
Surface Mount
Power Dissipation :
800mW
JESD-609 Code :
e3
Weight :
36mg
Factory Lead Time :
13 Weeks
Rise Time :
2ns
Input Capacitance (Ciss) (Max) @ Vds :
1040pF @ 15V
Vgs (Max) :
±20V
Operating Temperature :
-55°C~150°C TJ
Series :
PowerTrench®
Length :
3mm
Gate to Source Voltage (Vgs) :
20V
Width :
1.7mm
Packaging :
Tape and Reel (TR)
Lead Free :
Lead Free
Drain to Source Breakdown Voltage :
30V
Continuous Drain Current (ID) :
8A
Rds On (Max) @ Id, Vgs :
16m Ω @ 8A, 10V
Pbfree Code :
yes
Vgs(th) (Max) @ Id :
3V @ 250µA
Fall Time (Typ) :
2 ns
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Current - Continuous Drain (Id) @ 25°C :
8A Ta 8A Tc
Turn On Delay Time :
6 ns
Introducing Transistors - FETs, MOSFETs - Single onsemi FDC8878 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SOT-23-6 Thin, TSOT-23-6, Number of Pins:6, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, FDC8878 pinout, FDC8878 datasheet PDF, FDC8878 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDC8878 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDC8878


N-Channel Tape & Reel (TR) 16m Ω @ 8A, 10V ±20V 1040pF @ 15V 18nC @ 10V SOT-23-6 Thin, TSOT-23-6

FDC8878 Description

 

FDC8878 N-Channel MOSFET is made using a unique, high cell density technology called DMOS. FDC8878 MOSFET is extremely dense and is designed to reduce the on-state resistance. FDC8878 ON Semiconductor is specifically designed for applications with low voltage in notebook computers, mobile phones, PCMICA cards, and many other battery-powered circuits.

 

 

FDC8878 Features

 

Proprietary Super

Electrical capabilities

High density cell design for extremely low RDS(ON)

Fast switching speed

 

 

FDC8878 Applications

 

Notebook computers

Portable phones

PCMICA cards

Battery powered circuits 


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