FDC855N
- Mfr.Part #
- FDC855N
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 6.1A SUPERSOT6
- Stock
- 59
- In Stock :
- 59
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e3
- Power Dissipation :
- 1.6W
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 14 ns
- Rds On (Max) @ Id, Vgs :
- 27m Ω @ 6.1A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 655pF @ 15V
- Mounting Type :
- Surface Mount
- Length :
- 3mm
- Number of Terminations :
- 6
- Drain to Source Breakdown Voltage :
- 30V
- Terminal Form :
- Gull wing
- Width :
- 1.7mm
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 2ns
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Resistance :
- 27mOhm
- Operating Mode :
- ENHANCEMENT MODE
- Feedback Cap-Max (Crss) :
- 95 pF
- Mount :
- Surface Mount
- Vgs (Max) :
- ±20V
- Pbfree Code :
- yes
- Terminal Position :
- Dual
- Published :
- 2007
- Weight :
- 36mg
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 6.1A
- Number of Pins :
- 6
- Lead Free :
- Lead Free
- Factory Lead Time :
- 13 Weeks
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation-Max :
- 1.6W Ta
- Height :
- 1mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Turn On Delay Time :
- 6 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 10V
- Transistor Application :
- SWITCHING
- Nominal Vgs :
- 2 V
- Current - Continuous Drain (Id) @ 25°C :
- 6.1A Ta
- Radiation Hardening :
- No
- Threshold Voltage :
- 2V
- Operating Temperature :
- -55°C~150°C TJ
- REACH SVHC :
- No SVHC
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Fall Time (Typ) :
- 2 ns
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Series :
- PowerTrench®
- Datasheets
- FDC855N

N-Channel Tape & Reel (TR) 27m Ω @ 6.1A, 10V ±20V 655pF @ 15V 13nC @ 10V SOT-23-6 Thin, TSOT-23-6
FDC855N Description
This N-Channel Logic Level MOSFET is an efficient solution for low voltage and battery-powered applications. Utilizing Fairchild Semiconductor’s advanced PowerTrench? process, this device possesses minimized on-state resistance to optimize power consumption. They are ideal for applications where in-line power loss is critical.
FDC855N Features
Max rDS(on) = 27m? at VGS = 10V, ID = 6.1A
Max rDS(on) = 36m? at VGS = 4.5V, ID = 5.3A
SuperSOTTM -6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick).
RoHS Compliant
FDC855N Applications
Power Management in Notebook, Hard Disk Drive
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