FDC855N

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Mfr.Part #
FDC855N
Manufacturer
onsemi
Package / Case
SOT-23-6 Thin, TSOT-23-6
Datasheet
Download
Description
MOSFET N-CH 30V 6.1A SUPERSOT6
Stock
59
In Stock :
59

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Gate Charge (Qg) (Max) @ Vgs :
13nC @ 10V
Transistor Application :
SWITCHING
Nominal Vgs :
2 V
Number of Pins :
6
Fall Time (Typ) :
2 ns
Rds On (Max) @ Id, Vgs :
27m Ω @ 6.1A, 10V
Pbfree Code :
yes
ECCN Code :
EAR99
Terminal Form :
Gull wing
FET Type :
N-Channel
RoHS Status :
ROHS3 Compliant
Threshold Voltage :
2V
Vgs (Max) :
±20V
JESD-609 Code :
e3
Current - Continuous Drain (Id) @ 25°C :
6.1A Ta
Terminal Finish :
Tin (Sn)
Factory Lead Time :
13 Weeks
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tape and Reel (TR)
Terminal Position :
Dual
Number of Terminations :
6
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Package / Case :
SOT-23-6 Thin, TSOT-23-6
Input Capacitance (Ciss) (Max) @ Vds :
655pF @ 15V
Mounting Type :
Surface Mount
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Height :
1mm
Rise Time :
2ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Length :
3mm
Element Configuration :
Single
Power Dissipation-Max :
1.6W Ta
Series :
PowerTrench®
Power Dissipation :
1.6W
Lead Free :
Lead Free
Gate to Source Voltage (Vgs) :
20V
Turn-Off Delay Time :
14 ns
Continuous Drain Current (ID) :
6.1A
Weight :
36mg
Operating Mode :
ENHANCEMENT MODE
Drain to Source Breakdown Voltage :
30V
Resistance :
27mOhm
Turn On Delay Time :
6 ns
Published :
2007
Radiation Hardening :
No
Mount :
Surface Mount
Vgs(th) (Max) @ Id :
3V @ 250µA
Transistor Element Material :
SILICON
REACH SVHC :
No SVHC
Feedback Cap-Max (Crss) :
95 pF
Width :
1.7mm
Number of Elements :
1
Datasheets
FDC855N
Introducing Transistors - FETs, MOSFETs - Single onsemi FDC855N from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:6, Operating Temperature:-55°C~150°C TJ, Number of Terminations:6, Package / Case:SOT-23-6 Thin, TSOT-23-6, Mounting Type:Surface Mount, FDC855N pinout, FDC855N datasheet PDF, FDC855N amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDC855N ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDC855N


N-Channel Tape & Reel (TR) 27m Ω @ 6.1A, 10V ±20V 655pF @ 15V 13nC @ 10V SOT-23-6 Thin, TSOT-23-6

FDC855N Description

This N-Channel Logic Level MOSFET is an efficient solution for low voltage and battery-powered applications. Utilizing Fairchild Semiconductor’s advanced PowerTrench? process, this device possesses minimized on-state resistance to optimize power consumption. They are ideal for applications where in-line power loss is critical.


FDC855N Features

Max rDS(on) = 27m? at VGS = 10V, ID = 6.1A

Max rDS(on) = 36m? at VGS = 4.5V, ID = 5.3A

SuperSOTTM -6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick).

RoHS Compliant


FDC855N Applications

Power Management in Notebook, Hard Disk Drive


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