FDC86244

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

345pF @ 75V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Pbfree Code :

yes

Width :

1.7mm

Power Dissipation :

1.6W

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

144m Ω @ 2.3A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Length :

3mm

Additional Feature :

ULTRA-LOW RESISTANCE

Radiation Hardening :

No

Feedback Cap-Max (Crss) :

5 pF

Rise Time :

1.4ns

Weight :

36mg

Published :

2017

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Height :

1.1mm

Number of Terminations :

6

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Number of Pins :

6

Power Dissipation-Max :

1.6W Ta

Threshold Voltage :

2.5V

Number of Elements :

1

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 250µA

ECCN Code :

EAR99

Turn On Delay Time :

4.7 ns

Current - Continuous Drain (Id) @ 25°C :

2.3A Ta

Turn-Off Delay Time :

10 ns

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Series :

PowerTrench®

Continuous Drain Current (ID) :

2.3A

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 10V

Max Junction Temperature (Tj) :

150°C

REACH SVHC :

No SVHC

Number of Channels :

1

Transistor Element Material :

SILICON

Factory Lead Time :

10 Weeks

Contact Plating :

Tin

Terminal Form :

Gull wing

Fall Time (Typ) :

3.1 ns

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

FET Type :

N-Channel

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

150V